Product Information

RJK0330DPB-01-J0

RJK0330DPB-01-J0 electronic component of Renesas

Datasheet
Trans MOSFET N-CH 30V 45A 5-Pin LFPAK T/R
Manufacturer: Renesas
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2500: USD 0.6782 ea
Line Total: USD 1695.5

0 - Global Stock
MOQ: 2500  Multiples: 2500
Pack Size: 2500

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 2500
Multiples : 2500
2500 : USD 0.6782

0 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 2500
Multiples : 2500
2500 : USD 1.6019

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Additional Infomation About Product

Preliminary Datasheet RJK0330DPB-01 R07DS0266EJ0500 (Previous: REJ03G1639-0400) Silicon N Channel Power MOS FET Rev.5.00 Power Switching Mar 01, 2011 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance R = 2.1 m typ. (at V = 10 V) DS(on) GS Pb-free Halogen-free Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 D 5 4 1, 2, 3 Source G 4 Gate 4 5 Drain 3 2 1 SSS 1 23 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage V 30 V DSS Gate to source voltage V 20 V GSS Drain current I 45 A D Note1 Drain peak current I 180 A D(pulse) Body-drain diode reverse drain current I 45 A DR Note 2 Avalanche current I 22 A AP Note 2 Avalanche energy E 48.4 mJ AR Note3 Channel dissipation Pch 55 W Note3 Channel to case thermal resistance ch-c 2.27 C/W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tch = 25C, Rg 50 3. Tc = 25C R07DS0266EJ0500 Rev.5.00 Page 1 of 6 Mar 01, 2011 RJK0330DPB-01 Preliminary Electrical Characteristics (Ta = 25C) Item SymbolMin Typ Max Unit Test Conditions Drain to source breakdown voltage V 30 V I = 10 mA, V = 0 (BR)DSS D GS Gate to source leak current I 0.1 A V = 20 V, V = 0 GSS GS DS Zero gate voltage drain current I 1 A V = 30 V, V = 0 DSS DS GS Gate to source cutoff voltage V 1.2 2.5 V V = 10 V, I = 1 mA GS(off) DS D Note4 Static drain to source on state R 2.1 2.7 m I = 22.5 A, V = 10 V DS(on) D GS Note4 resistance R 2.8 3.9 m I = 22.5 A, V = 4.5 V DS(on) D GS Note4 Forward transfer admittance y 90 S I = 22.5 A, V = 10 V fs D DS Input capacitance Ciss 4300 pF V = 10 V, V = 0, DS GS f = 1 MHz Output capacitance Coss 800 pF Reverse transfer capacitance Crss 245 pF Gate Resistance Rg 0.4 Total gate charge Qg 27 nC V = 10 V, V = 4.5 V, DD GS I = 45 A D Gate to source charge Qgs 10.5 nC Gate to drain charge Qgd 5.8 nC Turn-on delay time t 6.8 ns V = 10 V, I = 22.5 A, d(on) GS D V 10 V, R = 0.44 , Rise time t 3.9 ns DD L r Rg = 4.7 Turn-off delay time t 50 ns d(off) Fall time t 5.4 ns f Note4 Bodydrain diode forward voltage V 0.78 1.02 V I = 45 A, V = 0 DF F GS Bodydrain diode reverse recovery t 36 ns I = 45 A, V = 0 rr F GS time di / dt = 100 A/ s F Bodydrain diode reverse recovery Q 34 nC rr charge Notes: 4. Pulse test R07DS0266EJ0500 Rev.5.00 Page 2 of 6 Mar 01, 2011

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