Product Information

BAS40-05HMFHT116

BAS40-05HMFHT116 electronic component of ROHM

Datasheet
Schottky Diodes & Rectifiers 40V Vr 0.12A Io SBD SOT-23 0.04A

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.2005 ea
Line Total: USD 0.2

2910 - Global Stock
Ships to you between
Wed. 29 May to Fri. 31 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
378 - WHS 1


Ships to you between
Thu. 30 May to Tue. 04 Jun

MOQ : 10
Multiples : 10
10 : USD 0.0544
100 : USD 0.0447
300 : USD 0.0398
3000 : USD 0.0361
6000 : USD 0.0332
9000 : USD 0.0317

2910 - WHS 2


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 1
Multiples : 1
1 : USD 0.2005
10 : USD 0.1448
100 : USD 0.07
1000 : USD 0.0499
3000 : USD 0.0404
9000 : USD 0.0296
24000 : USD 0.0249
45000 : USD 0.0237

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Maximum Operating Temperature
Qualification
Packaging
Brand
Product Type
Factory Pack Quantity :
Subcategory
Vr - Reverse Voltage
Cnhts
Hts Code
Mxhts
LoadingGif

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Schottky Barrier Diode BAS40-05HMFH Datasheet AEC-Q101 Qualified Application Dimensions (Unit : mm) Land Size Figure (Unit : mm) 1.9 Small current rectification 2.4 1.0MIN Features 1) Small mold type 4D SOT-23 0.8MIN (SOT-23) Structure 2) High reliability (3) (1) Anode (2) Anode ROHM : SSD3 Low V 3) F JEDEC : SOT-23 (3) Cathode (1) (2) JEITA : - Construction Taping Dimensions (Unit : mm) Silicon epitaxial planar type T116 Absolute Maximum Ratings (T = 25C) a Parameter Symbol Conditions Limits Unit V Repetitive peak reverse voltage Duty0.5 40 V RM V Direct reverse voltage 40 Reverse voltage V R Average forward rectified current I Direct current, per diode 120 mA F Repetitive peak forward current I t 1s, Duty0.5, per diode 120 mA FRM Square wave, tp<10ms, Non-repetitive forward surge current I 0.6 A FSM non-repetitive at T =25C, per diode a Operating junction temperature T - 150 C j Storage temperature T - 55 to 150 C stg Electrical Characteristics (T = 25C) j Parameter Symbol Conditions Min. Typ. Max. Unit I =1mA V - - 0.38 V F F1 V I =10mA Forward voltage - - 0.50 V F F2 V I =40mA -- 1 V F3 F V =30V I -- 1 A R1 R Reverse current V =40V I -- 10 R A R2 www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2016.11 - Rev.B 1/3 Not Recommended for New DesignsData Sheet BAS40-05HMFH Electrical Characteristic Curves 500 10000 T = 150 C j 1000 T = 150 C j 100 100 10 T = 75 C j T = 125 C j 10 1 T = 125 C j T = 25 C j 0.1 T = 75 C j 1 T = 25 C 0.01 j T = 25 C j 0.001 T = 25 C j 0.1 0.0001 0 200 400 600 800 1000 1200 0 5 10 15 20 25 30 35 40 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 8 0.16 T = 150 C T = 150 C j j 7 0.14 D = 1/2 6 0.12 Sin(=180) 5 0.10 Sin(=180) 4 0.08 DC 3 0.06 D = 1/2 2 DC 0.04 1 0.02 0 0.00 0 5 10 15 20 25 30 35 40 0 50 100 150 200 AVERAGE RECTIFIED REVERSE VOLTAGE : V (V) R FORWARD CURRENT : I (mA) o V -P CHARACTERISTICS R R I -P CHARACTERISTICS o F www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2016.11 - Rev.B 2/3 Not Recommended for New Designs FORWARD POWER FORWARD CURRENT : I (mA) F DISSIPATION : P (W) F REVERSE POWER REVERSE CURRENT : I ( A) R DISSIPATION : P (mW) R

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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