Product Information

BAW56HMFHT116

BAW56HMFHT116 electronic component of ROHM

Datasheet
Diodes - General Purpose, Power, Switching 100V Vrm; 500mA Ifm Swtch Diode SOT-23
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.284 ea
Line Total: USD 0.28

146 - Global Stock
Ships to you between
Wed. 29 May to Fri. 31 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
84 - WHS 1


Ships to you between
Thu. 30 May to Tue. 04 Jun

MOQ : 1
Multiples : 1
1 : USD 0.2383
10 : USD 0.2136
30 : USD 0.2017
100 : USD 0.189
500 : USD 0.182
1000 : USD 0.17

146 - WHS 2


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 1
Multiples : 1
1 : USD 0.284
100 : USD 0.1408
1000 : USD 0.0636
3000 : USD 0.0548
9000 : USD 0.0436
24000 : USD 0.0424
45000 : USD 0.0386
99000 : USD 0.0324

Read More Specifications

     
Manufacturer
Product Category
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Vf - Forward Voltage
Ir - Reverse Current
Maximum Operating Temperature
Series
Qualification
Packaging
Pd - Power Dissipation
Repetitive Reverse Voltage Vrrm Max
Forward Current If Av
Reverse Recovery Time Trr Max
Forward Surge Current Ifsm Max
No Of Pins
Svhc
Msl
Brand
Cnhts
Hts Code
Product Type
Factory Pack Quantity :
Subcategory
LoadingGif

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Additional Infomation About Product

BAW56HMFH Switching Diode (High speed switching) (AEC-Q101 qualified) Data sheet Outline V 100 V RM I 500 mA FM I 215 mA F I 4000 mA FSM Features Inner Circuit High reliability Small mold type Application Packaging Specifications Packing Embossed Tape High speed switching Reel Size(mm) 180 Taping Width(mm) 8 Basic Ordering Unit(pcs) 3000 Structure Taping Code T116 Epitaxial planar Marking D8Y (T = 25C) Absolute Maximum Ratings a Parameter Symbol Conditions Limits Unit V Repetitive peak reverse voltage - 100 V RM Reverse voltage V - 80 V R P Power dissipation Ta25 250 mW D I Repetitive peak reverse forward current Per diode 500 mA FM I Peak forward surge current t=1s 4000 mA FSM Per diode 215 mA I Forward current F Per device 125 mA Junction temperature T - 150 j T Storage temperature - -65 150 stg Cautionstatic electricity www.rohm.com 1/5 2017 ROHM Co., Ltd. All rights reserved. 2018/09/26 Rev.004 Not Recommended for New DesignsBAW56HMFH Data sheet (T = 25C) Characteristics Value per element a Parameter Symbol Conditions Min. Typ. Max. Unit I =1mA - - 715 mV F I =10mA - - 855 mV F V Forward voltage F I =50mA - - 1.00 V F I =150mA - - 1.25 V F V =80V T=25 - - 0.1 A R j I V =25V T=150 Reverse current - - 30 A R R j V =80V T=150 - - 50 A R j C V =0V f=1.0MHz Capacitance between terminals - - 2.0 pF t R t I =I =10mA R =100 I =1mA Reverse recovery time rr - - 4.0 ns F R L rr www.rohm.com 2/5 2017 ROHM Co., Ltd. All rights reserved. 2018/09/26 Rev.004 Not Recommended for New Designs

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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