BSM400D12P2G003 ROHM

BSM400D12P2G003 electronic component of ROHM
BSM400D12P2G003 ROHM
BSM400D12P2G003 Discrete Semiconductor Modules
BSM400D12P2G003  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BSM400D12P2G003 Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. BSM400D12P2G003 Discrete Semiconductor Modules are a product manufactured by ROHM. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

Part No. BSM400D12P2G003
Manufacturer: ROHM
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules SIC Pwr Module Half Bridge
Datasheet: BSM400D12P2G003 Datasheet (PDF)
Price (USD)
1: USD 3184.7568 ea
Line Total: USD 3184.76 
Availability : 0
  
QtyUnit Price
1$ 3184.7568

Availability 0
Ship by Tue. 07 Oct to Mon. 13 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 3184.7568


Availability 0
Ship by Fri. 03 Oct to Tue. 07 Oct
MOQ : 4
Multiples : 4
QtyUnit Price
4$ 2592.0099

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Type
Vgs - Gate-Source Voltage
Mounting Style
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Configuration
Brand
Transistor Polarity
Fall Time
Id - Continuous Drain Current
Pd - Power Dissipation
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Vds - Drain-Source Breakdown Voltage
Vgs Th - Gate-Source Threshold Voltage
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We are delighted to provide the BSM400D12P2G003 from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSM400D12P2G003 and other electronic components in the Discrete Semiconductor Modules category and beyond.

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SiC Power Module Datasheet BSM400D12P2G003 Application Circuit diagram Motor drive 1 7 Inverter, Converter Photovoltaics, wind power generation. 9 8 Induction heating equipment. 3,4 Features 6 5 1) Low surge, low switching loss. 2 10 2) High-speed switching possible. NTC 11 3) Reduced temperature dependence. Construction This product is a half bridge module consisting of SiC-DMOSFET and SiC-SBD from ROHM. Dimensions & Pin layout (Unit : mm) D 1 S S1 G 1 TH 1 T H2 8 9 7 1 0 1 1 4 1 3 2 6 5 G2 SS 2 www.rohm.com 13.Feb.2018 - Rev.001 2018 ROHM Co., Ltd. All rights reserved. 1/10 BSM400D12P2G003 Datasheet Absolute maximum ratings (T = 25C) j Parameter Symbol Conditions Ratings Unit V G-S short Drain - Source Voltage 1200 DSS V D-S short Gate - Source Voltage (+) GSS 22 V V D-S short -6 Gate - Source Voltage (-) GSS V G - S Voltage (t <300nsec) D-S short -10 to 26 GSSsurge surge I DC(Tc=60C) VGS=18V 397 D I Drain Current DC(Tc=59 ) VGS=18V 400 D Note 1) I Pulse (Tc = 60C 1ms VGS=18V 800 DRM Note 2) I DC(Tc=60C) VGS=18V S 418 A I DC(Tc=60C) VGS=0V 418 S Source Current Note 1) I Pulse (Tc = 60C 1ms VGS=18V 800 SRM Note 2) I Pulse (Tc = 60C 1ms VGS=0V 800 SRM Note 2) Total Power Dissipation Ptot Tc = 25C 2450 W Note 3) Tjmax Max Junction Temperature 175 Tjop Junction Temperature -40 to 150 C Tstg Storage Temperature -40 to 125 Visol Terminals to baseplate f = 60Hz AC 1 min. 2500 Vrms Isolation Voltage Main Terminals : M6 screw 4.5 - Mounting Torque N m Mounting to heat sink M5 screw 3.5 Note 1) Case temperature (Tc) is defined on the surface of base plate just under the chips. Note 2) Repetition rate should be kept within the range where temperature rise if die should not exceed Tjmax. Note 3) Tj is less than 175C. Example of acceptable VGS waveform +26V +22V 0V -6V -10V www.rohm.com 13.Feb.2018 - Rev.001 2018 ROHM Co., Ltd. All rights reserved. 2/10

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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