SiC Power Module Datasheet BSM400D12P2G003 Application Circuit diagram Motor drive 1 7 Inverter, Converter Photovoltaics, wind power generation. 9 8 Induction heating equipment. 3,4 Features 6 5 1) Low surge, low switching loss. 2 10 2) High-speed switching possible. NTC 11 3) Reduced temperature dependence. Construction This product is a half bridge module consisting of SiC-DMOSFET and SiC-SBD from ROHM. Dimensions & Pin layout (Unit : mm) D 1 S S1 G 1 TH 1 T H2 8 9 7 1 0 1 1 4 1 3 2 6 5 G2 SS 2 www.rohm.com 13.Feb.2018 - Rev.001 2018 ROHM Co., Ltd. All rights reserved. 1/10 BSM400D12P2G003 Datasheet Absolute maximum ratings (T = 25C) j Parameter Symbol Conditions Ratings Unit V G-S short Drain - Source Voltage 1200 DSS V D-S short Gate - Source Voltage (+) GSS 22 V V D-S short -6 Gate - Source Voltage (-) GSS V G - S Voltage (t <300nsec) D-S short -10 to 26 GSSsurge surge I DC(Tc=60C) VGS=18V 397 D I Drain Current DC(Tc=59 ) VGS=18V 400 D Note 1) I Pulse (Tc = 60C 1ms VGS=18V 800 DRM Note 2) I DC(Tc=60C) VGS=18V S 418 A I DC(Tc=60C) VGS=0V 418 S Source Current Note 1) I Pulse (Tc = 60C 1ms VGS=18V 800 SRM Note 2) I Pulse (Tc = 60C 1ms VGS=0V 800 SRM Note 2) Total Power Dissipation Ptot Tc = 25C 2450 W Note 3) Tjmax Max Junction Temperature 175 Tjop Junction Temperature -40 to 150 C Tstg Storage Temperature -40 to 125 Visol Terminals to baseplate f = 60Hz AC 1 min. 2500 Vrms Isolation Voltage Main Terminals : M6 screw 4.5 - Mounting Torque N m Mounting to heat sink M5 screw 3.5 Note 1) Case temperature (Tc) is defined on the surface of base plate just under the chips. Note 2) Repetition rate should be kept within the range where temperature rise if die should not exceed Tjmax. Note 3) Tj is less than 175C. Example of acceptable VGS waveform +26V +22V 0V -6V -10V www.rohm.com 13.Feb.2018 - Rev.001 2018 ROHM Co., Ltd. All rights reserved. 2/10