BSS84 Datasheet Pch -60V -0.23A Small Signal MOSFET llOutline SOT-23 V -60V DSS SST3 R (Max.) 5.3 DS(on) I 0.23A D P 350mW D llInner circuit llFeatures 1) Trench MOSFET technology 2) Very fast switching 3) 4.5V Drive llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching circuits Quantity (pcs) 3000 High-side loadswitch Taping code T116 Relay driver Marking VR llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V -60 V DSS I Continuous drain current 0.23 A D *1 I Pulsed drain current 0.92 A DP V Gate - Source voltage 20 V GSS *2 P 350 mW D Power dissipation *3 P 200 mW D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2019 ROHM Co., Ltd. All rights reserved. 20191029 - Rev.001 BSS84 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 357 /W thJA Thermal resistance, junction - ambient *3 R - - 625 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -60 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -56.9 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -60V, V = 0V - - -1 A DSS DS GS drain current I Gate - Source leakage current V = 20V, V = 0V - - 10 A GSS GS DS V V = V , I = -100A Gate threshold voltage -1.0 - -2.5 V GS(th) DS GS D V I = -100A GS(th) D Gate threshold voltage - 2.7 - mV/ temperature coefficient T referenced to 25 j V = -10V, I = -0.23A - 2.8 5.3 GS D Static drain - source *4 R DS(on) on - state resistance V = -4.5V, I = -0.23A - 3.5 6.4 GS D Forward Transfer *4 Y V = -10V, I = -0.23A 0.2 - - S fs DS D Admittance *1 Pw 10s, Duty cycle 1% *2 Mounted on a ceramic board (30mm x 30mm x 0.8 mm) 2 *3 Mounted on a FR4 board (20mm12mm0.8mmCu pad=0.8mm ) *4 Pulsed www.rohm.com 2/11 20191029 - Rev.001 2019 ROHM Co., Ltd. All rights reserved.