RB088NS-60FHTL

RB088NS-60FH Schottky Barrier Diode (AEC-Q101 qualified) Data sheet Outline V 60 V R I 10 A o I 50 A FSM Features Inner Circuit High reliability Power mold type Cathode common dual type Super Low I R Application Packaging Specifications Switching power supply Packing Embossed Tape Reel Size(mm) 330 Taping Width(mm) 24 Structure Quantity(pcs) 1000 Silicon epitaxial planar Taping Code TL Marking RB088NS60 Absolute Maximum Ratings (T =25C unless otherwise specified) c Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V Duty0.5 60 V RM Reverse voltage V Reverse direct voltage 60 V R 60Hz half sin waveformresistive load Average rectified forward current I 10 A o I /2 per diodeT =130Max. o c 60Hz half sin waveform Peak forward surge current I 50 A FSM non-repetitiveper diodeT =25 a Junction temperature T - 150 j Storage temperature T - -55 150 stg Attention www.rohm.com 1/6 2018- ROHM Co., Ltd. All rights reserved. 2019/05/27 Rev.003RB088NS-60FH Data sheet Electrical Characteristics (T =25C unless otherwise specified) j Parameter Symbol Conditions Min. Typ. Max. Unit (1) V Forward voltage I =5A - - 0.83 V F F (1) I V =60V Reverse current - - 3 A R R Note (1) Value per diode Thermal Characteristics Parameter Symbol Min. Typ. Max. Unit Per diode - - 2.4 /W (1) (2) R Thermal Resistance (Junction to case) JC Per device - - 1.5 /W (1) (3) R Thermal Resistance (Junction to ambient) - - 55 /W JA Notes (1) Value is guaranteed by design. (2) Transient dual interface measurement (TDIM) method. (3) Mounted on 50 x 50 x 1.6mm FR4 boardsingle-sided copper35m thicknessreference footprint. Characteristic Curves www.rohm.com 2/6 2018- ROHM Co., Ltd. All rights reserved. 2019/05/27 Rev.003