Product Information

RB095B-60TL

RB095B-60TL electronic component of ROHM

Datasheet
Diode Schottky 60V 6A 3-Pin(2+Tab) CPD T/R
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

200: USD 1.0859 ea
Line Total: USD 217.18

0 - Global Stock
MOQ: 200  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 200
Multiples : 1
200 : USD 1.0859

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Factory Pack Quantity :
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Additional Infomation About Product

Data Sheet Schottky Barrier Diode RB095B-60 Applications Dimensions(Unit : mm) Land size figure(Unit : mm) General rectification 6.0 Features 1.6 1.6 1) Power mold type. (CPD3) 2) Low V F 3) High reliability CPD 2.3 2.3 Construction Structure (2) Silicon epitaxial planar (1) (3) Taping dimensions(Unit : mm) 2.00.05 1.550.1 4.00.1 8.00.1 0.40.1 0 TL 3.00.1 6.80.1 8.00.1 2.70.2 Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit Reverse voltage (repetitive peak) V 60 V RM Reverse voltage (DC) V 60 V R Average rectified forward current (*1) 6 Io A Forward current surge peak(60Hz1cyc)(*1) 45 I A FSM Junction temperature Tj 150 C Storage temperature Tstg 40 to 150 C (*1) Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=112 C Electrical characteristic (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage V - - 0.58 V I =3.0A F F Reverse current I - - 300 A V =60V R R Thermal impedance jc - - 6.0 C/W junction to case www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.04 - Rev.G 1/3 10.10.1 00.5 13.50.2 7.50.05 2.50.1 6.0 2.0 3.0 16.00.2 10.10.1RB095B-60 Data Sheet Electrical charcteristics curves 1000 10 Ta=150 C 1000000 Ta=125C f=1MHz Ta=150C 100000 Ta=125C 10000 100 1 Ta=75C Ta=25C 1000 Ta=75 C 100 Ta=25C Ta=-25C 10 10 0.1 1 Ta=-25 C 0.1 0.01 1 0.01 0 100 200 300 400 500 600 700 800 0 102030 0 102030405060 REVERSE VOLTAGE : V (V) REVERSE VOLTAGE : V (V) R FORWARD VOLTAGE : V (mV) R F V -I CHARACTERISTICS V -Ct CHARACTERISTICS V -I CHARACTERISTICS R F F R R 200 800 550 180 Ta=25C 750 Ta=25C Ta=25C V =60V R 160 f=1MHz I =3A 700 F 540 n=30pcs V =0V R n=30pcs 140 650 n=10pcs 120 600 530 100 550 80 500 520 AVE:532.4mV AVE:514.4pF 60 450 AVE:20.8uA 400 40 510 AV E:4 25. 2mV 20 350 :1 .67 71 mV 300 0 500 V DISPERSION MAP I DISPERSION MAP F R Ct DISPERSION MAP 1000 300 30 Ta=25 C 1cyc Ifsm Ifsm 250 I =0.5A 25 F I =1A R 8.3ms 8.3ms 200 8.3 Irr=0.25*I 20 R 1cyc n=10pcs 100 150 15 AVE:73.0A 100 10 50 5 AVE:8.30ns 10 0 0 110 100 NUMBER OF CYCLES trr DISPERSION MAP I -CYCLE CHARACTERISTICS I DISPERSION MAP FSM FSM Mounted on epoxy board 10 I =5A 100 IM=100mA F 1000 1ms time Rth(j-a) 8 Ifsm 300us t 10 6 D=1/2 DC Sin( = 180) Rth(j-c) 100 4 1 2 0 10 0.1 0 5 10 15 110 100 0.001 0.1 10 1000 AVERAGE RECTIFIED TIME : t (ms) TIME : t (s) I -t CHARACTERISTICS FORWARD CURRENT Io (A) FSM Rth-t CHARACTERISTICS Io-Pf CHARACTERISTICS www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.04 - Rev.F PEAK SURGE PEAK SURGE FORWARD VOLTAGE : V (mV) FORWARD CURRENT : I (A) FSM F FORWARD CURRENT : I (A) F FORWARD CURRENT : I (A) FSM REVERSE CURRENT : I (uA) TRANSIENT R REVERSE RECOVERY TIME : trr (ns) REVERSE CURRENT : I (uA) R THAERMAL IMPEDANCE : Rth ( C/W ) PEAK SURGE FORWARD POWER CAPACITANCE BETWEEN CAPACITANCE BETWEEN DISSIPATION : Pf (W) FORWARD CURRENT : I (A) FSM TERMINALS : Ct (pF) TERMINALS : Ct (pF)

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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