Silicon Carbide Schottky Diode 650 V, 30 A FFSH3065ADN-F155 Description www.onsemi.com Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. 1 2 Features 3 Max Junction Temperature 175C TO247 Avalanche Rated 81 mJ LONG LEAD CASE 340CH High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery/No Forward Recovery This Device is PbFree, Halogen Free/BFR Free and RoHS 1 2 3 Anode Cathode/Case Anode Compliant Applications General Purpose MARKING DIAGRAM SMPS, Solar Inverter, UPS Power Switching Circuits Y&Z&3&K FFSH 3065ADN Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FFSH3065ADN = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: April, 2021 Rev. 4 FFSH3065ADNF155/DFFSH3065ADN F155 Table 1. ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Symbol Parameter Value Unit V Peak Repetitive Reverse Voltage 650 V RRM E Single Pulse Avalanche Energy (Note 1) 81 mJ AS I Continuous Rectified Forward Current T < 148C (Note 2) 16*/30** A F C Continuous Rectified Forward Current T < 135C 23*/36** C I NonRepetitive Peak Forward Surge Current T = 25C, 10 s 1000 A F,Max C 900 A T = 150C, 10 s C I NonRepetitive Forward Surge Current HalfSine Pulse, t = 8.3 ms 90 A F,SM p I Repetitive Forward Surge Current HalfSine Pulse, t = 8.3 ms 50 A F,RM p Ptot Power Dissipation T = 25C 165 W C T = 150C 28 W C T , T Operating and Storage Temperature Range 55 to +175 C J STG TO247 Mounting Torque, M3 Screw 60 Ncm Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. E of 81 mJ is based on starting T = 25C, L = 0.5 mH, I = 18 A, V = 50 V. AS J AS 2. Limited by per device. Table 2. THERMAL CHARACTERISTICS Symbol Parameter Rating Unit R Thermal Resistance, JunctiontoCase, Max. 0.91*/0.4** C/W JC * Per Leg ** Per Device Table 3. OPERATING CHARACTERISTICS (T = 25C, unless otherwise noted) C Symbol Parameter Test Conditions Min Typ Max Unit V Forward Voltage I = 16 A, T = 25C 1.5 1.75 V F F C I = 16 A, T = 125C 1.6 2.0 F C I = 16 A, T = 175C 1.72 2.4 F C I Reverse Current V = 650 V, T = 25C 200 A R R C V = 650 V, T = 125C 400 R C V = 650 V, T = 175C 600 R C Q Total Capacitive Charge V = 400 V 52 nC C C Total Capacitance V = 1 V, f = 100 kHz 887 pF R V = 200 V, f = 100 kHz 95 R V = 400 V, f = 100 kHz 72 R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. PART MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FFSH3065ADNF155 FFSH3065ADN TO247 Long Lead Tube N/A N/A 30 units www.onsemi.com 2