RB160M-90TR ROHM

Data Sheet Schottky Barrier Diode RB160M-90 Applications Dimensions (Unit : mm) Land size figure (Unit : mm) General rectification 0.10.1 0.05 1.60.1 1.2 Features 1)Small power mold type.PMDU 2)Low I R 3)High reliability PMDU Construction Silicon epitaxial planar Structure 0.90.1 0.80.1 ROHM : PMDU JEDEC :SOD-123 Manufacture Date Taping specifications (Unit : mm) 0.250.05 1.550.05 4.00.1 2.00.05 1.810.1 4.00.1 1.00.1 1.5MAX Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit Reverse voltage (repetitive) V 90 V RM Reverse voltage (DC) V 90 V R Average rectified forward current 1 Io A Forward current surge peak (60Hz1cyc) I 30 A FSM Junction temperature Tj 150 C Storage temperature Tstg 40 to 150 C (*1)Mounted on epoxy board. 180Half sine wave Electrical characteristic (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions V Forward voltage - - 0.73 V I =1.0A F F I V =90V Reverse current - - 100 A R R www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.04 - Rev.C 2.60.1 3.50.2 3.50.05 1.750.1 0.85 8.00.2 3.710.1 3.05RB160M-90 Data Sheet Ta=150 Ta=125 1 1000 10000 f=1MHz f=1MHz Ta=75 1000 Ta=75 Ta=125 Ta=25 0.1 100 100 Ta=150 Ta=-25 Ta=25 10 0.01 1 10 Ta=-25 0.1 0.001 0.01 1 0 100 200 300 400 500 600 700 0 10 203040506070 8090 0 5 10 15 20 25 30 REVERSE VOLTAGEVR(V) REVERSE VOLTAGE:VR(V) FORWARD VOLTAGEVF(mV) VR-IR CHARACTERISTICS VR-Ct CHARACTERISTICS VF-IF CHARACTERISTICS 200 650 100 Ta=25 Ta=25 190 90 Ta=25 Ta=25 IF=1A VR=90V VR=100V f=1MHz 180 80 640 n=30pcs n=30pn=30pcscs VR=0V 170 70 n=10pcs 160 60 630 150 50 AVE:632.1mV 140 40 620 AVE:149.6pF AVE:478.3nA 130 30 :36.1612nA 120 20 AVE:4.655uA 610 110 10 100 0 600 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 100 30 200 Ta=25 Ifsm IF=0.5A 1cyc 25 IR=1A Ifsm 8.3ms 8.3ms 150 Irr=0.25*IR 8.3ms 20 1cyc n=10pcs 50 15 100 AVE:7.40ns 10 50 5 AVE:56.0A 0 0 0 1 10 100 trr DISPERSION MAP NUMBER OF CYCLES IFSM DISPERSION MAP IFSM-CYCLE CHARACTERISTICS Mounted on epoxy board 2 1000 1000 IM=10mA IF=0.5A Ifsm Rth(j-a) t 1ms time 100 1.5 100 300us Rth(j-c) DC D=1/2 10 1 Sin(180) 10 1 0.5 0.1 1 0 0.001 0.01 0.1 1 10 100 1000 0.1 1 10 100 00.511.52 TIME:t(s) TIME:t(ms) AVERAGE RECTIFIED Rth-t CHARACTERISTICS IFSM-t CHARACTERISTICS FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.04 - Rev.C PEAK SURGE PEAK SURGE FORWARD CURRENT:IFSM(A) FORWARD VOLTAGE:VF(mV) FORWARD CURRENT:IFSM(A) FORWARD CURRENT:IF(A) TRANSIENT REVERSE CURRENT:IR(uA) REVERSE CURRENT:IR(uA) THAERMAL IMPEDANCE:Rth (/W) REVERSE RECOVERY TIME:trr(ns) CAPACITANCE BETWEEN CAPACITANCE BETWEEN PEAK SURGE FORWARD POWER TERMINALS:Ct(pF) FORWARD CURRENT:IFSM(A) TERMINALS:Ct(pF) DISSIPATION:Pf(W)