RB215T-40NZC9 ROHM

Schottky barrier diode Data Sheet RB215T-40NZ Applications Dimensions (Unit : mm) Structure Switching power supply Features (1) (2) (3) 1) Cathode common dual type.(TO-220) 2) Low IR 3) High reliability 215 4 Construction Silicon epitaxial planar Packing Dimensions (Unit : mm) 7 540 34.5 Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit Reverse voltage (repetitive peak) V 45 V RM Reverse voltage (DC) V 40 V R 20 Average rectified forward current(*1) Io A 100 Forward current surge peak (60Hz/1cyc) (*1) I A FSM Junction temperature Tj 150 C Storage temperature 40 to 150 Tstg C (*1)Business frequencies, 1/2 Io per diode, Tc=121C Electrical characteristic (Ta=25C) Parameter Conditions Symbol Min. Typ. Max. Unit Forward voltage V - - 0.55 V I =10A F F Reverse current I - - 500 A V =40V R R Thermal impedance jc - - 1.75 C/W junction to case www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2016.09 - Rev.A 1/3RB215T-40NZ Data Sheet Electrical characteristics curves 10000 1000000 10 Ta=150 C Ta=125C Ta=150 C f=1MHz 100000 Ta=125 C 1000 10000 Ta=75 C 1 Ta=75 C 1000 100 Ta=25 C Ta=25 C 100 0.1 Ta=-25 C Ta=-25 C 10 10 1 0.01 0.1 1 0 100 200 300 400 500 600 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 FORWARD VOLTAGE:V (mV) REVERSE VOLTAGE:V (V) REVERSE VOLTAGE:V (V) R F R V -I CHARACTERISTICS V -I CHARACTERISTICS V -Ct CHARACTERISTICS F F R R R 2550 1000 500 Ta=25 C Ta=25C Ta=25 C 2540 900 V =40V I =3A R F f=1MHz 2530 n=30pcs 490 n=30pcs 800 V =0V R n=10pcs 2520 700 2510 600 480 2500 500 2490 400 470 2480 300 AVE:78.7uA 2470 200 460 2460 100 AVE:472.9mV AVE:2515.6pF 2450 0 450 V DISPERSION MAP I DISPERSION MAP F Ct DISPERSION MAP R 1000 300 30 Ta=25 C Ifsm 1cyc Ifsm 25 I =0.5A 250 F I =1A R 8.3ms 8.3ms AVE:27.4ns Irr=0.25*I 8.3ms R 20 200 1cyc n=10pcs 15 100 150 10 100 5 50 AVE:176.0A 0 10 0 1 10 100 trr DISPERSION MAP NUMBER OF CYCLES I DISPERSION MAP FSM I -CYCLE CHARACTERISTICS FSM 100 1000 30 IM=100mA I =10A F Ifsm t 1ms time 10 Rth(j-a) 20 300us Mounted on epoxy board D=1/2 100 DC Sin(=180) Rth(j-c) 10 1 0 10 0.1 0 1020 3040 110 100 0.001 0.01 0.1 1 10 100 1000 TIME:t(ms) AVERAGE RECTIFIED TIME:t(s) I -t CHARACTERISTICS FORWARD CURRENT:Io(A) FSM Rth-t CHARACTERISTICS Io-Pf CHARACTERISTICS www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2016.09 - Rev.A 2/3 PEAK SURGE PEAK SURGE FORWARD CURRENT:I (A) FSM FORWARD VOLTAGE:V (mV) FORWARD CURRENT:I (A) FORWARD CURRENT:I (A) F F FSM REVERSE CURRENT:I (uA) TRANSIENT R REVERSE CURRENT:I (uA) REVERSE RECOVERY TIME:trr(ns) R THAERMAL IMPEDANCE:Rth (C/W) CAPACITANCE BETWEEN PEAK SURGE CAPACITANCE BETWEEN FORWARD POWER TERMINALS:Ct(pF) FORWARD CURRENT:I (A) TERMINALS:Ct(pF) FSM DISSIPATION:Pf(W)