RDN050N20 Transistors 10V Drive Nch MOS FET RDN050N20 z External dimensions (Unit : mm) z Structure Silicon N-channel TO-220FN 4.5 10.0 2.8 3.2 MOS FET z Features 1) Low on-resistance. 1.2 1.3 2) Low input capacitance. 3) Exellent resistance to damage from static electricity. 0.8 (1)Gate 2.54 2.54 0.75 2.6 (2)Drain ( ) ( )( ) 1 2 3 (3)Source z Application Switching z Packaging specifications z Equivalent Circuit Package Bulk Drain Type Code Basic ordering unit (pieces) 500 RDN050N20 2 Gate z Absolute maximum ratings (Ta=25C) 1 Parameter Symbol Limits Unit 1 ESD Protection diode Drain-Source Voltage VDSS 200 V 2 Body Diode Source Gate-Source Voltage VGSS 30 V A protection diode is included between the gate and Continuous I 5 A D the source terminals to protect the diode against static Drain Current electricity when the product is in use. Use the protection 1 Pulsed IDP 20 A circuit when the fixed voltages are exceeded. Reverse Drain Continuous IDR 5 A 1 Current A Pulsed IDRP 20 Source Current Continuous IS 5 A 1 (Body Diode) Pulsed I 20 A SP 2 5 Avalanche Current IAS A 2 Avalanche Energy E 75 mJ AS Total Power Dissipation (TC=25C) PD 30 W 150 Channel Temperature Tch C Storage Temperature Tstg 55 to +150 C 1 Pw 10s, Duty cycle 1% 2 L 4.5mH, VDD=50V, RG=25 , 1Pulse, Tch=25C z Thermal resistance Parameter Symbol Limits Unit Channel to case Rth(ch-c) 4.17 C/W Channel to ambient Rth(ch-a) 62.5 C/W Rev.A 1/4 14.0 15.0 12.0 5.0 8.0RDN050N20 Transistors z Electrical characteristics (Ta=25C) Symbol Min. Typ. Max. Unit Conditions Parameter IGSS 10 A VGS=30V, VDS=0V Gate-Source Leakage Drain-Source Breakdown Voltage V(BR) DSS 200 V ID=250A, VGS=0V Zero Gate Voltage Drain Current IDSS 25 A VDS=200V, VGS=0V VGS (th) 2.0 4.0 V VDS=10V, ID=1mA Gate Threshold Voltage Static Drain-Source On-State RDS (on) 0.55 0.72 ID=2.5A, VGS=10V Resistance Forward Transfer Admittance Yfs 1.1 1.8 S VDS=10V, ID=2.5A Input Capacitance Ciss 292 pF VDS=10V Coss 92 pF VGS=0V Output Capacitance Reverse Transfer Capacitance Crss 28 pF f=1MHz td (on) 10 ns ID=2.5A, VDD 100V Turn-On Delay Time Rise Time tr 22 ns VGS=10V Turn-Off Delay Time td (off) 23 ns RL=40 tf 28 ns RG=10 Fall Time Total Gate Charge trr 9.3 18.6 nC VDD=100V Qrr 2.8 nC VGS=10V Gate-Source Charge Gate-Drain Charge Qg 3.7 nC ID=5A Pulsed z Body diode characteristics (Source-drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Conditions Unit Forward voltage VSD 2.0 V IS= 2.5A, VGS=0V Reverse recovery time trr 117 ns IDR= 5A, VGS=0V Reverse recovery charge Qrr 0.37 C di/dt= 100A / s Pulsed Rev.A 2/4