DMTH6010SCT
60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary Features
I Rated to +175C Ideal for High Ambient Temperature
D
BV R Max
DSS DS(ON)
T = +25C
C
Environments
60V 100A
7.2m @ V = 10V
GS
100% Unclamped Inductive Switching Ensures More Reliable
and Robust End Application
Low Input Capacitance
Description
Low Input/Output Leakage
This new generation MOSFET features low on-resistance and fast
Lead-Free Finish; RoHS compliant (Notes 1 & 2)
switching, making it ideal for high efficiency power management
Halogen and Antimony Free. Green Device (Note 3)
applications.
Mechanical Data
Applications
Case: TO220-3
Power Supplies
Case Material: Molded Plastic, Green Molding Compound.
Motor Control
UL Flammability Classification Rating 94V-0
DC-DC Converters
Terminals: Matte Tin Finish Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 1.85 grams (Approximate)
TO220-3
Top View
Bottom View Equivalent Circuit
Top View
Pin Out Configuration
Ordering Information (Note 4)
Part Number Case Packaging
DMTH6010SCT TO220-3 50 Pieces/Tube
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See
DMTH6010SCT
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage 60 V
V
DSS
Gate-Source Voltage V
V 20
GSS
T = +25C 100
C
Continuous Drain Current (Note 6) A
I
D
T = +100C 76
C
100
Maximum Continuous Body Diode Forward Current (Note 6) T = +25C I A
C S
160
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I A
DM
Avalanche Current, L=0.1mH 20 A
IAS
Avalanche Energy, L=0.1mH 20 mJ
E
AS
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 5) 2.8 W
T = +25C P
A D
Thermal Resistance, Junction to Ambient (Note 5) 52.8 C/W
R
JA
Total Power Dissipation (Note 6) 125 W
T = +25C P
C D
Thermal Resistance, Junction to Case (Note 6) 1.2 C/W
R
JC
Operating and Storage Temperature Range T T -55 to +175 C
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage 60 V
BV V = 0V, I = 1mA
DSS GS D
Zero Gate Voltage Drain Current I 1 A V = 48V, V = 0V
DSS DS GS
Gate-Source Leakage I 100 nA V = 20V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage V 2 4 V V = V , I = 250A
GS(TH) DS GS D
Static Drain-Source On-Resistance R 5.5 7.2 m V = 10V, I =20A
DS(ON) GS D
Diode Forward Voltage V 1.3 V V = 0V, I = 20A
SD GS S
DYNAMIC CHARACTERISTICS (Note 8)
1940
Input Capacitance C
iss
V = 30V, V = 0V,
DS GS
759
Output Capacitance pF
Coss
f = 1MHz
Reverse Transfer Capacitance 85
C
rss
Gate Resistance 0.55
R V = 0V, V = 0V, f = 1MHz
g DS GS
Total Gate Charge 36.3
Q
g
Gate-Source Charge 7.5 nC
Q V = 30V, I = 20A, V = 10V
gs DS D GS
10.5
Gate-Drain Charge Q
gd
5.7
Turn-On Delay Time t
D(ON)
10.4
Turn-On Rise Time t
R V = 30V, V = 10V,
DD GS
ns
16.3
Turn-Off Delay Time t I = 20A, R = 3
D(OFF) D G
11.2
Turn-Off Fall Time
tF
Reverse Recovery Time 35.6 ns
t
RR
I = 20A, di/dt = 100A/s
F
Reverse Recovery Charge 37.9 nC
Q
RR
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on infinite heat sink.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
2 of 7
April 2016
DMTH6010SCT
www.diodes.com Diodes Incorporated
Document number: DS38216 Rev. 2 - 2