Product Information

RF081MM2STFTR

RF081MM2STFTR electronic component of ROHM

Datasheet
RECTIFIER, AEC-Q101, 0.8A, 200V, SOD-123

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.1602 ea
Line Total: USD 0.8

19 - Global Stock
Ships to you between
Wed. 22 May to Mon. 27 May
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
19 - WHS 1


Ships to you between
Wed. 22 May to Mon. 27 May

MOQ : 5
Multiples : 5
5 : USD 0.1602
50 : USD 0.1313
150 : USD 0.1168
500 : USD 0.106
3000 : USD 0.0871
6000 : USD 0.0827

319 - WHS 2


Ships to you between Tue. 21 May to Thu. 23 May

MOQ : 1
Multiples : 1
1 : USD 0.4589
10 : USD 0.349
100 : USD 0.2138
500 : USD 0.1968
1000 : USD 0.1425
3000 : USD 0.1292
9000 : USD 0.1195
24000 : USD 0.1195
45000 : USD 0.1147

     
Manufacturer
Product Category
If - Forward Current
Configuration
Vf - Forward Voltage
Max Surge Current
Maximum Operating Temperature
Series
Packaging
Repetitive Reverse Voltage Vrrm Max
Reverse Recovery Time Trr Max
Diode Case Style
No Of Pins
Svhc
Msl
LoadingGif

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1 Super Fast Recovery Diode RF081MM2S Datasheet Series Dimensions (Unit : mm) Land size figure (Unit : mm) 0.10.1 0.05 Standard Fast Recovery 1.60.1 1.2 Application General rectification PMDU Cathode 0.90.1 Features Structure 0.80.1 ROHM : PMDU 1) Low forward voltage JEITA : SOD-123 1 : Manufacture Date 2) Low switching loss Anode Taping Dimensions (Unit : mm) 0.250.05 1.550.05 Construction 4.00.1 2.00.05 1.550.05 Silicon epitaxial planar type 4.00.1 1.00.1 1.810.1 1.00.1 1.6MAX 1.5MAX Absolute maximum ratings (T = 25C) a Parameter Symbol Conditions Limits Unit V Duty0.5 200 Repetitive peak reverse voltage V RM V Direct reverse voltage 200 Reverse voltage V R T = 45C a 0.8 On glass epoxy substrate I Average rectified foward current A o 60Hz half sin wave , Resistive load T= 130C l 1 60Hz half sin wave ,Non-repetitive at T=25C Non-repetitive forward surge current I j 20 A FSM Operating junction temperature T - 150 C j Storage temperature T - 55 to 150 C stg Electrical characteristics (T = 25C) j Parameter Symbol Conditions Min. Typ. Max. Unit I =0.8A 0.75 0.81 0.95 F V Forward voltage V F I =1A - 0.82 0.98 F I V =200V Reverse current -0.01 10 A R R I =0.5A, I =1A, Irr=0.25I Reverse recovery time trr - 14 25 ns F R R R Junction to lead C / W Thermal resistance -- 20 th(j-l) www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2018.12 - Rev.B 1/4 2.60.1 3.500.12.2 3.50.05 1.750.1 0.85 8.00.2 3.713.710.080.1 3.05Datasheet RF081MM2S Electrical characteristic curves 10 10000 T = 150 C j T = 125 C j 1000 1 100 T = 75 C j 0.1 T = 150 C j 10 T = 125 C j T = 25 C j 0.01 T = 75 C j 1 T = 25 C j 0.1 0.001 0 50 100 150 200 0 200 400 600 800 1000 1200 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 100 100 f = 1MHz I FSM T = 25 C a 8.3ms 8.3ms 1cyc. 10 10 T = 25 C j 1 1 0 5 10 15 20 25 30 110 100 NUMBER OF CYCLES REVERSE VOLTAGE : V (V) R I -CYCLE CHARACTERISTICS V -C CHARACTERISTICS FSM R t www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2018.12 - Rev.B 2/4 CAPACITANCE BETWEEN FORWARD CURRENT : I (A) F TERMINALS : C (pF) t PEAK SURGE REVERSE CURRENT : I (nA) R FORWARD CURRENT : I (A) FSM

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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