RF08L6STE25 ROHM

Data Sheet Super Fast Recovery Diode RF08L6S Series Dimensions (Unit : mm) Land size figure (Unit : mm) Standard Fast Recovery 2.0 2.60.2 Applications General rectification 6 6 8 1 0.10.02 0.1 PMDS 2.00.2 Features 1.50.2 1)Small power mold type. PMDS Structure 2)high switching speed ROHM : PMDS 3)Low forward voltage JEDEC : SOD-106 Manufacture date Construction Silicon epitaxial planar Taping dimensions (Unit : mm) 2.00.05 4.00.1 0.3 1.550.05 1.55 2.90.1 4.00.1 2.8MAX Absolute maximum ratings (Tl=25C) Parameter Conditions Symbol Limits Unit Repetitive peak Reverse voltage V D0.5 600 V RM Reverse voltage V Direct voltage 600 V R Glass epoxy substrate mounted Average rectified forward current Io 0.8 A 60Hz half sin wave, Non-repetitive Ta=25C Forward current surge peak I 20 A FSM one cycle peak value, Tj=25C Tl=100C Junction temperature Tj 150 C Storage temperature Tstg C 55 to 150 Electrical characteristic (Tj=25C) Parameter Conditions Symbol Min. Typ. Max. Unit Forward voltage V I =0.8A 1 1.3 V F F V =600V Reverse current I 0.01 10 A R R Reverse recovery time I =0.5A,I =1A,Irr=0.25I trr 50 70 ns F R R Thermal Resistance Rth(j-l) junction to lead 23 C/W www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.05 - Rev.A 1/3 4.50.2 1.20.3 5.00.3 2.0 5.30.1 0.05 9.50.1 5.50.05 1.750.1 4.2 120.2Data Sheet RF08L6S 10 10000 100 f=1MHz 1000 Tj=125 1 Tj=150 Tj=150 100 Tj=125 0.1 10 Tj=25 10 Tj=75 Tj=75 0.01 1 Tj=25 0.1 1 0.001 0 100 200 300 400 500 600 0 500 1000 1500 2000 0 5 10 15 20 25 30 REVERSE VOLTAGE V (V) FORWARD VOLTAGE V (mV) R REVERSE VOLTAGE:V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS R R V -Ct CHARACTERISTICS F F R 60 1100 100 I =0.8A F f=1MHz Tj=25 Tj=25 V =0V V =600V R R 1050 n=30pcs Tj=25 n=30pcs 50 10 1000 AVE:7.35nA AVE:999.5mV 40 AVE:44.2pF 1 950 0.1 30 900 V DISPERSION MAP I DISPERSION MAP Ct DISPERSION MAP F R 80 60 1000 I =0.5A F 1cyc Ifsm 55 Ifsm I =1A R 60 Irr=0.25*I R 8.3ms 8.3ms 8.3ms Tj=25 50 100 1cyc 40 45 AVE:48.8ns AVE:49.4A 40 10 20 35 0 30 1 110 100 trr DISPERSION MAP NUMBER OF CYCLES I DISRESION MAP FSM I -CYCLE CHARACTERISTICS FSM 30 1000 IM=10mA I =100mA F 1000 25 Rth(j-a) time 1m Ifsm 100 t 20 AVE9.80kV 300us 15 Rth(j-l) 10 100 10 AVE2.70kV 1 On Glass Epoxi Board 5 0 10 0.1 C=200pF C=100pF 110 100 0.001 0.01 0.1 1 10 100 1000 R=0 R=1.5k TIME:t(ms) TIME:t(s) I -t CHARACTERISTICS FSM ESD DISPERSION MAP Rth-t CHARACTERISTICS www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.05 - Rev.A PEAK SURGE PEAK SURGE FORWARD CURRENT:I (A) FORWARD VOLTAGE:V (mV) F FSM FORWARD CURRENT:I (A) FORWARD CURRENT:I (A) F FSM ELECTROSTATIC REVERSE CURRENT:I (nA) REVERSE CURRENT:I (nA) R R REVERSE RECOVERY TIME:trr(ns) DISCHARGE TEST ESD(KV) PEAK SURGE CAPACITANCE BETWEEN CAPACITANCE BETWEEN TRANSIENT FORWARD CURRENT:I (A) TERMINALS:Ct(pF) FSM THAERMAL IMPEDANCE:Rth (/W) TERMINALS:Ct(pF)