Product Information

RFUH10TF6SFHC9

RFUH10TF6SFHC9 electronic component of ROHM

Datasheet
Diodes - General Purpose, Power, Switching 600V VR 10A IO ITO-220AC; TO-220NFM
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.5985 ea
Line Total: USD 1.6

258 - Global Stock
Ships to you between
Wed. 29 May to Fri. 31 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
258 - WHS 1


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 1
Multiples : 1
1 : USD 1.6492
10 : USD 1.3764
100 : USD 1.0964
500 : USD 0.9563
1000 : USD 0.7653
5000 : USD 0.7653
10000 : USD 0.7368

Read More Specifications

     
Manufacturer
Product Category
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Packaging
Hts Code
LoadingGif

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Additional Infomation About Product

Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFUH10TF6SFH Serise Dimensions(Unit : mm) Structure Super Fast Recovery Applications General rectification RFUH10 TF6S Features 1)Ultra low switching loss 2)High current overload capacity Construction Silicon epitaxial planer type ROHM : TO220NFM Manufacture Year Manufacture Week Absolute Maximum Ratings(Tc=25C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V Duty 0.5 600 V RM Reverse voltage V Direct voltage 600 V R Average rectified foward current 60Hz half sin wave , Resistive load Tc=52C 10 Io A Forward current surge peak I 60Hz half sin wave , Non-repetitive at Tj=25C 60 A FSM Junction temperature 150 Tj C Storage temperature Tstg 55 to 150 C Electrical Characteristics(Tj=25C) Parameter Conditions Min. Typ. Max. Symbol Unit V I =10A 1.8 2.8 Forward voltage F V F V =600V Reverse current I 0.05 10 A R R I =0.5A,I =1A,Irr=0.25I Reverse recovery time trr 15 25 ns F R R Thermal resistance Rth(j-c) Junction to case 3.5 C/W ROHM COM WWW LL R IGHTS RESER ED V ,TD /(- O 2 1/4 2012.06 - Rev.A Data Sheet RFUH10TF6SFH 100 100000 Tj=150 C 10000 Tj=125 C 10 1000 Tj=75 C Tj=150 C Tj=125 C 100 Tj=25 C Tj=75 C 1 10 Tj=25 C 0.1 1 0 500 1000 1500 2000 2500 3000 0 100 200 300 400 500 600 REVERSE VOLTAGE:V (V) FORWARD VOLTAGE:V (mV) R F V -I CHARACTERISTICS V -I CHARACTERISTICS R R F F 2000 1000 I =10A F V =600V R 1950 Tj=25 C Tj=25 C 1900 1850 1800 100 AVE:32.3nA 1750 AVE:1806mV 1700 1650 10 1600 I DISPERSION MAP R V DISPERSION MAP F 1000 180 f=1MHz f=1MHz 175 V =0V R 170 Tj=25 C 165 100 160 155 150 AVE:157pF 10 145 140 135 1 130 0 5 10 15 20 25 30 Ct DISPERSION MAP REVERSE VOLTAGE:V (V) R V -Ct CHARACTERISTICS R www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.06 - Rev.A 2/4 CAPACITANCE BETWEEN FORWARD CURRENT:I (A) F TERMINALS:Ct(pF) FORWARD VOLTAGE:V (mV) F CAPACITANCE BETWEEN REVERSE CURRENT:I (nA) R REVERSE CURRENT:I (nA) R TERMINALS:Ct(pF)

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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