RFUH20NS4STL ROHM

RFUH20NS4STL electronic component of ROHM
RFUH20NS4STL ROHM
RFUH20NS4STL Diodes - General Purpose, Power, Switching
RFUH20NS4STL Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of RFUH20NS4STL Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. RFUH20NS4STL Diodes - General Purpose, Power, Switching are a product manufactured by ROHM. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

Part No. RFUH20NS4STL
Manufacturer: ROHM
Category: Diodes - General Purpose, Power, Switching
Description: Diodes - General Purpose, Power, Switching DIODE-RECTIFIER
Datasheet: RFUH20NS4STL Datasheet (PDF)
Price (USD)
1: USD 2.7375 ea
Line Total: USD 2.74 
Availability : 1737
  
Ship by Mon. 11 Aug to Wed. 13 Aug
QtyUnit Price
1$ 2.7375
10$ 1.884
100$ 1.32
500$ 1.0945
1000$ 0.9658
2000$ 0.8855
5000$ 0.8745

 RFUH20NS4STL More Buying Options & Price Grid(s)
Availability 1737
Ship by Mon. 11 Aug to Wed. 13 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.7375
10$ 1.884
100$ 1.32
500$ 1.0945
1000$ 0.9658
2000$ 0.8855
5000$ 0.8745

Availability 97
Ship by Wed. 13 Aug to Tue. 19 Aug
MOQ : 100
Multiples : 1
QtyUnit Price
100$ 2.7646

Specifications

   
Manufacturer
Product Category
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Maximum Operating Temperature
Packaging
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RFUH20NS4STL from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RFUH20NS4STL and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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Additional Infomation About Product

Data Sheet Super Fast Recovery Diode RFUH20NS4S Serise Dimensions(Unit : mm) Land Size Figure(Unit : mm) Super Fast Recovery Applications RFUH20 General rectification NS4S   Features LPDS 1)Ultra low switching loss 2)High current overload capacity Structure ROHM : LPDS JEITA : TO263S Construction Manufacture Date Silicon epitaxial planer type Taping Dimensions(Unit : mm) Absolute Maximum Ratings(Tc=25C) Parameter Conditions Limits Symbol Unit Repetitive peak reverse voltage V Duty 0.5 430 V RM Reverse voltage V Direct voltage 430 V R Average rectified foward current Io 60Hz half sin wave , Resistive load Tc=26C 20 A (*1) Forward current surge peak I 100 A FSM 60Hz half sin wave , Non-repetitive at Tj=25C Junction temperature Tj 150 C Storage temperature Tstg 55 to 150 C (*1) 1-3pin common circuit  Electrical Characteristics(Tj=25C) Parameter Symbol Conditions Min. Typ. Max. Unit I =20A Forward voltage V 1.5 1.7 V F F I V =430V 0.05 10 Reverse current R A R I =0.5A,I =1A,Irr=0.25I 18 25 Reverse recovery time trr F R R ns Junction to case 3.0 Thermal resistance Rth(j-c) C/W ROHMCOM WWW !LLR IGHTSRESER ED V  ,TD /(-#O 2 1/4 2012.06 - Rev.A Data Sheet RFUH20NS4S 100 100000 Tj=150 C 10000 Tj=125 C 10 Tj=150 C 1000 Tj=75 C Tj=125 C 100 Tj=75 C Tj=25 C 1 Tj=25 C 10 0.1 1 0 500 1000 1500 2000 2500 0 50 100 150 200 250 300 350 400 450 REVERSE VOLTAGE:V (V) FORWARD VOLTAGE:V (mV) R F V -I CHARACTERISTICS V -I CHARACTERISTICS R R F F 1550 100 1540 I =20A V =430V F R 1530 Tj=25 C Tj=25 C 1520 1510 1500 AVE:1455mV 1490 1480 10 1470 1460 AVE:21.6nA 1450 1440 1430 1420 1410 1400 1 I DISPERSION MAP V DISPERSION MAP R F 1000 300 f=1MHz f=1MHz 295 V =0V R 290 Tj=25 C 285 100 280 275 270 265 10 260 AVE:266pF 255 250 245 1 240 0 5 10 15 20 25 30 Ct DISPERSION MAP REVERSE VOLTAGE:V (V) R V -Ct CHARACTERISTICS R www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.06 - Rev.A 2/4 CAPACITANCE BETWEEN FORWARD CURRENT:I (A) F FORWARD VOLTAGE:V (mV) TERMINALS:Ct(pF) F CAPACITANCE BETWEEN REVERSE CURRENT:I (nA) R REVERSE CURRENT:I (nA) R TERMINALS:Ct(pF)

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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