Product Information

RFUS20NS4STL

RFUS20NS4STL electronic component of ROHM

Datasheet
ROHM Semiconductor Diodes - General Purpose, Power, Switching DIODE FAST REC 430V 20.0A D2PAK
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.103 ea
Line Total: USD 3.1

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 1000
Multiples : 1000
1000 : USD 1.212
2000 : USD 1.194

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Series
Packaging
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Operating Temperature Range
Mxhts
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

Data Sheet Super Fast Recovery Diode RFUS20NS4S lSeries lDimensions (Unit : mm) lLand size figure (Unit : mm) Ultra Fast Recovery RFUS20 NS4S lApplications General rectification lFeatures 1)Ultra low switching loss 2)High current overload capacity lStructure 3)Cathode common single type ROHM : LPDS JEITA : TO263S Manufacture Year, Week and Day lConstruction lTaping dimensions (Unit : mm) Silicon epitaxial planer lAbsolute maximum ratings (Tc=25 C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V Duty0.5 430 V RM Reverse voltage V Direct voltage 430 V R 60Hz half sin wave resistive load , Average rectified forward current Io Tc=47C 20 A 60Hz half sin wave, Non-repetitive I Forward current surge peak 100 A FSM one cycle peak value, Tj=25 Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C lElectrical characteristics (Tj=25 C) Parameter Symbol Conditions Min. Typ. Max. Unit V I =20A Forward voltage F 1.4 1.6 V F V =430V Reverse current I 0.06 10 A R R Reverse recovery time (*) I =0.5A,I =1A,Irr=0.25I trr 24 35 ns F R R Thermal resistance (*) Rth(j-c) junction to case 2.5 C/W (*) Design assurance without measurement. www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.10 - Rev.A 1/4 Not Recommended for New DesignsData Sheet RFUS20NS4S 100 1000000 Tj=125 C Tj=125 C 100000 Tj=150 C Tj=150 C 10 10000 1000 Tj=75 C Tj=25 C 1 100 Tj=75 C Tj=25 C 10 0.1 1 0 500 1000 1500 2000 2500 0 50 100 150 200 250 300 350 400 450 REVERSE VOLTAGE V (V) FORWARD VOLTAGEV (mV) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 1000 1500 f=1MHz Tj=25 C Tj=25 C 1450 I =20A F n=20pcs 1400 100 1350 AVE:1373mV 1300 1250 10 1200 0 5 10 15 20 25 30 V DISPERSION MAP F REVERSE VOLTAGE:V (V) R V -Ct CHARACTERISTICS R 100 400 Ta=25 C Tj=25 C f=1MHz V =0V V =430V R 390 R n=10pcs n=20pcs AVE:49.0nA 380 10 370 AVE:372.3pF 360 1 350 I DISPERSION MAP Ct DISPERSION MAP R www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.10 - Rev.A 2/4 Not Recommended for New Designs CAPACITANCE BETWEEN REVERSE CURRENT:I (nA) FORWARD CURRENT:I (A) R F TERMINALS:Ct(pF) CAPACITANCE BETWEEN REVERSE CURRENT:I (nA) FORWARD VOLTAGE:V (mV) R F TERMINALS:Ct(pF)

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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