We are the renowned RGT00TS65DGC11 IGBT Transistors seller and distributer in the USA, India, Europe, Australia, and beyond. RGT00TS65DGC11 IGBT Transistors is a manufacturer from ROHM. X-ON Electronics Components provides affordable electronic IGBT Transistors in the USA.

RGT00TS65DGC11

RGT00TS65DGC11 electronic component of ROHM
Part No.RGT00TS65DGC11
Manufacturer: ROHM
Category:IGBT Transistors
Description: IGBT Transistors 650V 50A Trench IGBT Field Stop TO-247N
Datasheet: RGT00TS65DGC11 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 6.3259 ea
Line Total: USD 6.33

5 - Global Stock
Ships to you between
Tue. 04 Jun to Thu. 06 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
350 - WHS 1


Ships to you between Tue. 04 Jun to Thu. 06 Jun

MOQ : 1
Multiples : 1
1 : USD 5.4395
10 : USD 4.6115
25 : USD 4.4275
100 : USD 3.864
450 : USD 3.381
2700 : USD 3.289
5400 : USD 3.2545

We proudly offer the RGT00TS65DGC11 IGBT Transistors at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the RGT00TS65DGC11 IGBT Transistors.
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Mounting Style
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Brand
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
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RGT00TS65D 650V 50A Field Stop Trench IGBT Datasheet Outline TO-247N V 650V CES I 50A C(100C) V 1.65V CE(sat) (Typ.) P 277W (1)(2)(3) D Features Inner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate 2) Low Switching Loss (2) Collector *1 3) Short Circuit Withstand Time 5 s (3) Emitter (1) 4) Built in Very Fast & Soft Recovery FRD *1 Built in FRD (3) (RFN - Series) 5) Pb - free Lead Plating RoHS Compliant Packaging Specifications Packaging Tube Applications General Inverter Reel Size (mm) - UPS Tape Width (mm) - Type Power Conditioner Basic Ordering Unit (pcs) 450 Welder Packing code C11 RGT00TS65D Marking Absolute Maximum Ratings (at T = 25C unless otherwise specified) C Parameter Symbol Value Unit V Collector - Emitter Voltage 650 V CES V Gate - Emitter Voltage 30 V GES T = 25C I 85 A C C Collector Current T = 100C I 50 A C C *1 150 A Pulsed Collector Current I CP T = 25C I 50 A C F Diode Forward Current T = 100C I 30 A C F *1 Diode Pulsed Forward Current 150 A I FP T = 25C P 277 W C D Power Dissipation T = 100C P 138 W C D Operating Junction Temperature T C 40 to +175 j T Storage Temperature 55 to +175 C stg *1 Pulse width limited by T jmax. www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.10 - Rev.C 1/11Data Sheet RGT00TS65D Thermal Resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal Resistance IGBT Junction - Case - - 0.54 C/W (j-c) R Thermal Resistance Diode Junction - Case - - 1.42 C/W (j-c) IGBT Electrical Characteristics (at T = 25C unless otherwise specified) j Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector - Emitter Breakdown BV I = 10A, V = 0V 650 -- V CES C GE Voltage I V = 650V, V = 0V Collector Cut - off Current -- 10 A CES CE GE I Gate - Emitter Leakage Current V = 30V, V = 0V - - 200 nA GES GE CE Gate - Emitter Threshold V V = 5V, I = 34.7mA 5.0 6.0 7.0 V GE(th) CE C Voltage I = 50A, V = 15V C GE Collector - Emitter Saturation V T = 25C - 1.65 2.1 V CE(sat) j Voltage T = 175C - 2.2 - j www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.10 - Rev.C 2/11

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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