Product Information

RGT8NL65DGTL

RGT8NL65DGTL electronic component of ROHM

Datasheet
IGBT Trench Field Stop 650 V 8 A 65 W Surface Mount LPDS

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.0408 ea
Line Total: USD 2.04

956 - Global Stock
Ships to you between
Wed. 29 May to Fri. 31 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
956 - WHS 1


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 1
Multiples : 1
1 : USD 2.0408
10 : USD 1.6373
100 : USD 1.4119
250 : USD 1.3764
500 : USD 1.2221
1000 : USD 1.0607
2000 : USD 1.0489
5000 : USD 1.0429
10000 : USD 1.0085

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Brand
Product Type
Factory Pack Quantity :
Subcategory
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RGT8NL65D 650V 4A Field Stop Trench IGBT Datasheet Outline LPDL (TO-263L) V 650V (2) CES I 4A C(100C) (1) V 1.65V CE(sat) (Typ.) (3) P 65W D Features Inner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate 2) Low Switching Loss (2) Collector *1 3) Short Circuit Withstand Time 5 s (3) Emitter (1) 4) Built in Very Fast & Soft Recovery FRD *1 Built in FRD (3) (RFN - Series) 5) Pb - free Lead Plating RoHS Compliant Packaging Specifications Packaging Taping Applications General Inverter Reel Size (mm) 330 UPS Tape Width (mm) 24 Type Power Conditioner Basic Ordering Unit (pcs) 1,000 Welder Packing Code TL Marking RGT8NL65D Absolute Maximum Ratings (at T = 25C unless otherwise specified) C Parameter Symbol Value Unit V Collector - Emitter Voltage 650 V CES V Gate - Emitter Voltage 30 V GES T = 25C I 8A C C Collector Current T = 100C I 4A C C *1 12 A Pulsed Collector Current I CP T = 25C I 7A C F Diode Forward Current T = 100C I 4A C F *1 Diode Pulsed Forward Current 12 A I FP T = 25C P 65 W C D Power Dissipation T = 100C P 32 W C D Operating Junction Temperature T C 40 to +175 j T Storage Temperature 55 to +175 C stg *1 Pulse width limited by T jmax. www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 2017.05 - Rev.A 1/11Datasheet RGT8NL65D Thermal Resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal Resistance IGBT Junction - Case - - 2.30 C/W (j-c) R Thermal Resistance Diode Junction - Case - - 8.70 C/W (j-c) IGBT Electrical Characteristics (at T = 25C unless otherwise specified) j Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector - Emitter Breakdown BV I = 10A, V = 0V 650 -- V CES C GE Voltage I V = 650V, V = 0V Collector Cut - off Current -- 10 A CES CE GE I Gate - Emitter Leakage Current V = 30V, V = 0V - - 200 nA GES GE CE Gate - Emitter Threshold V V = 5V, I = 2.8mA 5.0 6.0 7.0 V GE(th) CE C Voltage I = 4A, V = 15V C GE Collector - Emitter Saturation V T = 25C - 1.65 2.1 V CE(sat) j Voltage T = 175C - 2.1 - j www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 2017.05 - Rev.A 2/11

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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