X-On Electronics has gained recognition as a prominent supplier of RGTV80TS65DGC11 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. RGTV80TS65DGC11 IGBT Transistors are a product manufactured by ROHM. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

RGTV80TS65DGC11 ROHM

Name: RGTV80TS65DGC11
Brand: ROHM
SKU: RGTV80TS65DGC11_ROHM
Availability: OutOfStock
Rating: 5 (11 reviews)

RGTV80TS65DGC11 electronic component of ROHM

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See Product Specifications

Part No.	RGTV80TS65DGC11
Manufacturer:	ROHM
Category:	IGBT Transistors
Description:	ROHM Semiconductor
Datasheet:	RGTV80TS65DGC11 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

11: USD 3.6309 ea
Line Total: USD 39.94

Availability - 0

MOQ: 11 Multiples: 1
Pack Size: 1

RGTV80TS65DGC11 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 16 May to Thu. 22 May MOQ : 1 Multiples : 1	1 : USD 8.1444 10 : USD 6.7248 100 : USD 5.3912 500 : USD 4.7545 1000 : USD 4.2832 2000 : USD 4.2088

0 Ship by Wed. 14 May to Fri. 16 May MOQ : 1 Multiples : 1	1 : USD 7.5289 10 : USD 6.386 30 : USD 6.1952 120 : USD 5.2024

0 Ship by Fri. 16 May to Thu. 22 May MOQ : 21 Multiples : 1	21 : USD 10.4308 30 : USD 6.0291

0 Ship by Fri. 16 May to Thu. 22 May MOQ : 11 Multiples : 1	11 : USD 3.6309

0 Ship by Fri. 16 May to Thu. 22 May MOQ : 23 Multiples : 1	23 : USD 4.7098 25 : USD 4.5075

Specifications

Manufacturer ROHM ROHM
Product Category IGBT Transistors IGBT Transistors
Brand ROHM ROHM

We are delighted to provide the RGTV80TS65DGC11 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RGTV80TS65DGC11 and other electronic components in the IGBT Transistors category and beyond.

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Additional Infomation About Product

RGTV80TS65D Datasheet 650V 40A Field Stop Trench IGBT lOutline TO-247N V 650V CES I 40A C (100C) V 1.5V CE(sat) (Typ.) P 234W D (1) (2)(3) lFeatures lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate 2) High Speed Switching & Low Switching Loss (2) Collector *1 (3) Emitter 3) Short Circuit Withstand Time 2s (1) 4) Built in Very Fast & Soft Recovery FRD *1 Built in FRD (3) 5) Pb - free Lead Plating ; RoHS Compliant lApplication lPackaging Specifications Solar Inverter Packaging Tube UPS Reel Size (mm) - Welding Tape Width (mm) - Type IH Basic Ordering Unit (pcs) 450 PFC Packing Code C11 Marking RGTV80TS65D lAbsolute Maximum Ratings (at T = 25C unless otherwise specified) C Parameter Symbol Value Unit V Collector - Emitter Voltage 650 V CES V Gate - Emitter Voltage 30 V GES T = 25C I 78 A C C Collector Current T = 100C I 40 A C C *1 Pulsed Collector Current I 160 A CP T = 25C I 73 A C F Diode Forward Current T = 100C I 40 A C F *1 Diode Pulsed Forward Current I 160 A FP T = 25C P 234 W C D Power Dissipation T = 100C P 117 W C D Operating Junction Temperature T -40 to +175 C j T Storage Temperature -55 to +175 C stg *1 Pulse width limited by T jmax. www.rohm.com 2019.12 - Rev.A 2019 ROHM Co., Ltd. All rights reserved. 1/11Datasheet RGTV80TS65D lThermal Resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal Resistance IGBT Junction - Case - - 0.64 C/W (j-c) Thermal Resistance Diode Junction - Case R - - 0.93 C/W (j-c) lIGBT Electrical Characteristics (at T = 25C unless otherwise specified) j Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector - Emitter Breakdown BV I = 10A, V = 0V 650 - - V CES C GE Voltage Collector Cut - off Current I V = 650V, V = 0V - - 10 A CES CE GE Gate - Emitter Leakage I V = 30V, V = 0V - - 200 nA GES GE CE Current Gate - Emitter Threshold V V = 5V, I = 27.5mA 5.0 6.0 7.0 V GE(th) CE C Voltage I = 40A, V = 15V, C GE Collector - Emitter Saturation V T = 25C - 1.5 1.9 V CE(sat) j Voltage T = 175C - 1.85 - j www.rohm.com 2019.12 - Rev.A 2019 ROHM Co., Ltd. All rights reserved. 2/11

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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