Product Information

RP1A090ZPTR

RP1A090ZPTR electronic component of ROHM

Datasheet
Trans MOSFET P-CH 12V 9A 6-Pin MPT T/R
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

200: USD 0.8012 ea
Line Total: USD 160.24

0 - Global Stock
MOQ: 200  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 200
Multiples : 1
200 : USD 0.8012

Read More Specifications

     
Manufacturer
Product Category
Packaging
Channel Mode
Deleted
Continuous Drain Current
Gate-Source Voltage Max
Power Dissipation
Mounting
Operating Temp Range
Package Type
Pin Count
Polarity
Type
Number Of Elements
Operating Temperature Classification
Drain-Source On-Volt
Rad Hardened
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Additional Infomation About Product

1.5V Drive Pch MOSFET RP1A090ZP Structure Dimensions (Unit : mm) Silicon P-channel MOSFET MPT6 (Single) (6) (5) (4) Features 1) Low Voltage Drive(1.5V drive). 2) Built-in G-S Protection Diode. (1) (2) (3) 3) Small Surface Mount Package (MPT6). Application Switching Packaging specifications Inner circuit Package Taping (6) (5) (4) Type Code TR Basic ordering unit (pieces) 1000 RP1A090ZP 2 (1) Source 1 (2) Source Absolute maximum ratings (Ta = 25C) (3) Gate (4) Drain (1) (2) (3) Parameter Symbol Limits Unit (5) Drain 1 ESD PROTECTION DIODE (6) Drain Drain-source voltage V 12 V DSS 2 BODY DIODE Gate-source voltage V 10 V GSS Continuous I 9A D Drain current *1 Pulsed I 36 A DP Continuous I 1.6 A Source current S *1 (Body Diode) Pulsed I 36 A SP *2 Power dissipation P 2.0 W D Channel temperature Tch 150 C Range of storage temperature Tstg 55 to +150 C *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. Thermal resistance Parameter Symbol Limits Unit * Channel to Ambient Rth (ch-a) 62.5 C / W *Mounted on a ceramic board. www.rohm.com 2010.07 - Rev.B 1/5 2010 ROHM Co., Ltd. All rights reserved.RP1A090ZP Data Sheet Electrical characteristics (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I -- 10 AV =10V, V =0V GSS GS DS Drain-source breakdown voltage V 12 - - V I =1mA, V =0V (BR)DSS D GS Zero gate voltage drain current I -- 1 AV =12V, V =0V DSS DS GS Gate threshold voltage V 0.3 - 1.0 V V =6V, I =1mA GS (th) DS D - 8 12 I =9A, V =4.5V D GS -11 16 I =4.5A, V =2.5V Static drain-source on-state * D GS R m DS (on) resistance -15 23 I =4.5A, V =1.8V D GS -19 38 I =1.8A, V =1.5V D GS ** Forward transfer admittance l Y l12 - - S I =9A, V =6V fs D DS Input capacitance C - 7400 - pF V =6V iss DS Output capacitance C - 800 - pF V =0V oss GS Reverse transfer capacitance C - 750 - pF f=1MHz rss Turn-on delay time t ** - 35 - ns I =4.5A, V 6V d(on) D DD Rise time t ** - 120 - ns V =4.5V r GS Turn-off delay time t ** - 350 - ns R =1.3 d(off) L ** Fall time t - 170 - ns R =10 f G Total gate charge Q ** - 59 - nC I =9A, g D ** Gate-source charge Q - 11 - nC V =4.5V gs GS Gate-drain charge Q -9 - nCV 6V ** gd DD *Pulsed Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions * Forward Voltage V -- 1.2 V I =9A, V =0V SD s GS *Pulsed www.rohm.com 2/5 2010.07 - Rev.B 2010 ROHM Co., Ltd. All rights reserved.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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