RQ5E025ATTCL ROHM

RQ5E025ATTCL electronic component of ROHM
RQ5E025ATTCL ROHM
RQ5E025ATTCL MOSFETs
RQ5E025ATTCL  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of RQ5E025ATTCL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RQ5E025ATTCL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. RQ5E025ATTCL
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET Pch -30V -2.5A Si MOSFET
Datasheet: RQ5E025ATTCL Datasheet (PDF)
Price (USD)
1: USD 0.5387 ea
Line Total: USD 0.54 
Availability : 7425
  
Ship by Wed. 01 Oct to Fri. 03 Oct
QtyUnit Price
1$ 0.5387
10$ 0.4113
100$ 0.2415
500$ 0.1793
1000$ 0.1639
3000$ 0.1419
6000$ 0.1364
9000$ 0.1254
24000$ 0.1199

Availability 299
Ship by Fri. 03 Oct to Thu. 09 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.7024
10$ 0.5448
30$ 0.4786
100$ 0.2967
500$ 0.2427
1000$ 0.2278


Availability 7425
Ship by Wed. 01 Oct to Fri. 03 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.5387
10$ 0.4113
100$ 0.2415
500$ 0.1793
1000$ 0.1639
3000$ 0.1419
6000$ 0.1364
9000$ 0.1254
24000$ 0.1199

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RQ5E025ATTCL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RQ5E025ATTCL and other electronic components in the MOSFETs category and beyond.

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RQ5E025AT Datasheet Pch -30V -2.5A Middle Power MOSFET llOutline TSMT3 V -30V DSS R (Max.) 91m DS(on) I 2.5A D P 1W D llInner circuit llFeatures 1) Low on - resistance. 2) Small Surface Mount Package (TSMT3). 3) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TCL Marking JS llAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit V Drain - Source voltage -30 V DSS I Continuous drain current 2.5 A D *2 I Pulsed drain current 12 A D,pulse V Gate - Source voltage 20 V GSS *3 E Avalanche energy, single pulse 4.5 mJ AS *3 I Avalanche current -2.5 A AS *4 P Power dissipation 1 W D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg www.rohm.com 1/11 2014 ROHM Co., Ltd. All rights reserved. 20141208 - Rev.001 RQ5E025AT Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *4 R Thermal resistance, junction - ambient - 125 - /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -30 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -22 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -30V, V = 0V - - -1 A DSS DS GS drain current I Gate - Source leakage current V = 20V, V = 0V - - 100 nA GSS GS DS V V = V , I = -1mA Gate threshold voltage -1.0 - -2.5 V GS(th) DS GS D V I = -1mA GS(th) D Gate threshold voltage - 2.9 - mV/ temperature coefficient T referenced to 25 j V = -10V, I = -2.5A - 70 91 GS D Static drain - source *5 R m DS(on) on - state resistance V = -4.5V, I = -2.5A - 104 135 GS D *5 g Transconductance V = -5V, I = -2.5A 2.1 - - S fs DS D *1 Limited only by maximum temperature allowed. *2 Pw 10s, Duty cycle 1% *3 L 1mH, V = -15V, R = 25, STARTING T = 25 Fig.3-1,3-2 DD G ch *4 Mounted on a ceramic boad (30300.8mm) *5 Pulsed www.rohm.com 2/11 20141208 - Rev.001 2014 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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