DMTH6010LPD 60V 175C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Rated to +175C Ideal for High Ambient Temperature Environments I max D BV R max 100% Unclamped Inductive Switching ensures more reliable and DSS DS(ON) T = +25C C robust end application 11m V = 10V 47.6A GS High Conversion Efficiency 60V 16m V = 4.5V 39.5A GS Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications An Automotive-Compliant Part is Available Under Separate Datasheet (DMTH6010LPDQ) This MOSFET is designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, making it DS(ON) ideal for high-efficiency power management applications. Mechanical Data Case: PowerDI5060-8 (Type C) Engine Management Systems Case Material: Molded Plastic,Gree Molding Compound. Body Control Electronics UL Flammability Classification Rating 94V-0 DCDC Converters Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate) D1 D2 S1 D1 G1 D1 S2 D2 G1 G2 G2 D2 S1 S2 Pin1 Pin out Top View Bottom View Top View Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMTH6010LPD-13 PowerDI5060-8 (Type C) 2,500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. Halogen and Antimony freeGreen products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 3. See DMTH6010LPD Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS T = +25C 47.6 C Continuous Drain Current (Note 6) A I D 33.7 T = +100C C T = +25C 13.1 A Continuous Drain Current (Note 5) I A D 10.9 T = +70C A Pulsed Drain Current (10s pulse, duty cycle = 1%) I 90 A DM Maximum Continuous Body Diode Forward Current (Note 6) I 31 A S Avalanche Current, L = 0.1mH I A AS Avalanche Energy, L = 0.1mH E 20 mJ AS Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) T = +25C P 2.8 W A D Thermal Resistance, Junction to Ambient (Note 5) R 53 C/W JA Total Power Dissipation (Note 6) T = +25C P 37.5 W C D Thermal Resistance, Junction to Case (Note 6) 4 C/W RJC Operating and Storage Temperature Range -55 to +175 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 60 V V = 0V, I = 1mA DSS GS D Zero Gate Voltage Drain Current I 1 A V = 48V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 1 3 V V = V , I = 250A GS(TH) DS GS D 8.5 11 V = 10V, I = 20A GS D Static Drain-Source On-Resistance R m DS(ON) 10.9 16 V = 4.5V, I = 20A GS D Diode Forward Voltage 0.9 1.2 V VSD VGS = 0V, IS = 20A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance pF C 2615 iss V = 30V, V = 0V, DS GS Output Capacitance pF C 1415 oss f = 1MHz Reverse Transfer Capacitance pF C 58 rss Gate Resistance R 0.67 V = 0V, V = 0V, f = 1MHz g DS GS nC Total Gate Charge (V = 4.5V) Q 20.3 GS g Total Gate Charge (V = 10V) Q 40.2 nC GS g V = 30V, I = 20A DS D Gate-Source Charge Q 5.9 nC gs Gate-Drain Charge Q 9.3 nC gd Turn-On Delay Time t 5.7 ns D(ON) Turn-On Rise Time ns t 8.8 R V = 30V, V = 10V, DD GS Turn-Off Delay Time ns I = 20A, R = 3 t 20.8 D G D(OFF) Turn-Off Fall Time ns t 7.4 F Body Diode Reverse Recovery Time ns t 34.5 RR I = 20A, di/dt = 100A/s F Body Diode Reverse Recovery Charge nC Q 37.5 RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 6. Thermal resistance from junction to soldering point (on the exposed drain pad). 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 DMTH6010LPD May 2016 Diodes Incorporated www.diodes.com Document number: DS38244 Rev. 2 - 2 ADVANCE INFORMATION ADVANCED INFORMATION