DMP2170U 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max BVDSS RDS(ON) max Low Input Capacitance TA = +25C Fast Switching Speed 90m V = -4.5V -3.1A GS Low Input/Output Leakage -20V 250m V = -2.5V -1.8A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance Case: SOT23 (R ) and yet maintain superior switching performance, making it DS(ON) Case Material: Molded Plastic, Green Molding Compound. ideal for high-efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Battery Charging Terminals: Finish Matte Tin Annealed over Copper Leadframe. Power Management Functions Solderable per MIL-STD-202, Method 208 DC-DC Converters Terminals Connections: See Diagram Below Portable Power Adaptors Weight: 0.009 grams (Approximate) D SOT23 D G G S S Top View Top View Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMP2170U-7 SOT23 3,000/Tape & Reel DMP2170U-13 SOT23 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP2170U Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -20 V DSS Gate-Source Voltage V 12 V GSS Steady T = +25C -3.1 A Continuous Drain Current (Note 6) V = -4.5V I A GS D State -2.5 T = +70C A Maximum Continuous Body Diode Forward Current (Note 6) -1.25 A I S -13 A Pulsed Drain Current (10s pulse, duty cycle = 1%) I DM Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) P 0.78 W D Thermal Resistance, Junction to Ambient (Note 5) Steady State 163 C/W R JA Total Power Dissipation (Note 6) P 1.28 W D Thermal Resistance, Junction to Ambient (Note 6) Steady State 99 C/W R JA Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( TA = +25C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV -20 - - V V = 0V, I = -250A DSS GS D - - -1.0 A Zero Gate Voltage Drain Current T = +25C I V = -20V, V = 0V J DSS DS GS Gate-Source Leakage - - 100 nA I V = 12V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage -0.4 -1.01 -1.25 V V V = V , I = -250A GS(TH) DS GS D V = -4.5V, I = -3.5A 62 90 GS D Static Drain-Source On-Resistance R - 92 180 m V = -2.7V, I = -3.0A DS(ON) GS D 101 250 V = -2.5V, I = -2.6A GS D Diode Forward Voltage - -0.8 -1.1 V V V = 0V, I = -1A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance - 303 - pF C iss V = -10V, V = 0V, DS GS Output Capacitance - 46 - pF C oss f = 1.0MHz Reverse Transfer Capacitance - 37 - pF C rss Gate Resistance - 16 - R V = 0V, V = 0V, f = 1MHz g DS GS - 3.6 - Total Gate Charge (V = -4.5V) Q nC GS g - 7.8 - Total Gate Charge (V = -10V) Q nC GS g V = -10V, I = -1.5A DS D - 0.6 - Gate-Source Charge Q nC gs - 1.1 - Gate-Drain Charge Q nC gd 5.4 Turn-On Delay Time - - ns t D(ON) Turn-On Rise Time - 18.3 - ns t V = -10V, V = -4.5V, R DD GS Turn-Off Delay Time - 16.2 - ns I = -3.5A, R = 6 t D G D(OFF) Turn-Off Fall Time - 13.6 - ns t F Body Diode Reverse Recovery Time - 5.5 - ns t I = -2.0A, dI/dt = -100A/s RR S 1.23 Body Diode Reverse Recovery Charge Q - - nC I = -2.0A, dI/dt = -100A/s RR S Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 DMP2170U June 2016 Diodes Incorporated www.diodes.com Document number: DS38558 Rev. 1 - 2