TM V = 600 V IXTA 5N60P PolarHV DSS I = 5 A IXTP 5N60P D25 Power MOSFET R 1.7 DS(on) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) V T = 25C to 175C 600 V DSS J V T = 25C to 175C R = 1 M 600 V DGR J GS V Continuous 30 V GSS G V Transient 40 V S GSM (TAB) I T = 25C5A D25 C TO-220 (IXTP) I T = 25C, pulse width limited by T 10 A DM C JM I T = 25C5A AR C E T = 25C20mJ AR C E T = 25C 360 mJ AS C (TAB) G dv/dt I I , di/dt 100 A/s, V V , 10 V/ns D S DM DD DSS S T 150C, R = 18 J G G = Gate D = Drain P T = 25C 100 W D C S = Source TAB = Drain T -55 ... +150 C J T 150 C JM T -55 ... +150 C stg T 1.6 mm (0.062 in.) from case for 10 s 300 C L T Plastic body for 10 s 260 C SOLD M Mounting torque (TO-220) 1.13/10 Nm/lb.in. d Weight TO-220 4 g Features TO-263 3 g z International standard packages z Unclamped Inductive Switching (UIS) rated z Low package inductance Symbol Test Conditions Characteristic Values - easy to drive and to protect (T = 25C, unless otherwise specified) Min. Typ. Max. J BV V = 0 V, I = 250 A 600 V DSS GS D Advantages V V = V , I = 50A 3.0 5.5 V GS(th) DS GS D z Easy to mount I V = 30 V, V = 0 V 100 nA GSS GS DS z Space savings z I V = V 5 A High power density DSS DS DSS V = 0 V T = 125C50 A GS J R V = 10 V, I = 0.5 I 1.7 DS(on) GS D D25 Pulse test, t 300 s, duty cycle d 2 % DS99426E(04/06) 2006 IXYS All rights reserved OBSOLETEIXTA 5N60P IXTP 5N60P TO-263 (IXTA) Outline Symbol Test Conditions Characteristic Values (T = 25C, unless otherwise specified) J Min. Typ. Max. g V = 10 V I = 0.5 I , pulse test 3.0 5.0 S fs DS D D25 C 750 pF iss C V = 0 V, V = 25 V, f = 1 MHz 78 pF oss GS DS C 6.3 pF rss t 22 ns d(on) t V = 10 V, V = 0.5 V , I = 0.5 I 24 ns r GS DS DSS D D25 t R = 18 (External) 55 ns d(off) G t 17 ns f Q 14.2 nC g(on) Q V = 10 V, V = 0.5 V , I = 0.5 I 4.8 nC gs GS DS DSS D D25 Q 4.8 nC gd R 1.25 C/W thJC R (TO-220) 0.25 C/W thCS Source-Drain Diode Characteristic Values (T = 25C, unless otherwise specified) J Symbol Test Conditions Min. Typ. Max. TO-220 (IXTP) Outline I V = 0 V 5 A S GS I Repetitive 15 A SM V I = I , V = 0 V, I = 5 A, -di/dt = 100 A/s 1.5 V SD F S GS F t Pulse test, t 300 s, duty cycle d 2 % 500 ns rr Pins: 1 - Gate 2 - Drain 3 - Source 4 - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 OBSOLETE