X-On Electronics has gained recognition as a prominent supplier of RQ5E040RPTL MOSFET across the USA, India, Europe, Australia, and various other global locations. RQ5E040RPTL MOSFET are a product manufactured by ROHM. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

RQ5E040RPTL ROHM

RQ5E040RPTL electronic component of ROHM
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See Product Specifications
Part No.RQ5E040RPTL
Manufacturer: ROHM
Category: MOSFET
Description: MOSFET PCH -30V -4A SMALL SIGNAL
Datasheet: RQ5E040RPTL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.7086 ea
Line Total: USD 0.71

Availability - 11033
Ships to you between
Thu. 27 Jun to Mon. 01 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
8172 - WHS 1


Ships to you between Thu. 27 Jun to Mon. 01 Jul

MOQ : 1
Multiples : 1
1 : USD 0.6026
10 : USD 0.4703
100 : USD 0.3645
500 : USD 0.3208
1000 : USD 0.2794
3000 : USD 0.253
6000 : USD 0.2473
9000 : USD 0.2392
24000 : USD 0.2369

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RQ5E040RPTL from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RQ5E040RPTL and other electronic components in the MOSFET category and beyond.

RQ5E040RP Datasheet Pch -30V -4A Small Signal MOSFET llOutline SOT-346T V -30V DSS SC-96 R (Max.) 45m DS(on) TSMT3 I 4A D P 1.0W D llInner circuit llFeatures 1) Low on - resistance 2) Built-in G-S Protection Diode 3) Small Surface Mount Package (TSMT3) 4) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type DC/DC converters Basic ordering unit (pcs) 3000 Taping code TL Marking UG llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V -30 V DSS I Continuous drain current 4 A D *1 I Pulsed drain current 16 A DP V Gate - Source voltage 20 V GSS *2 P 1.0 W D Power dissipation *3 P 0.7 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2017 ROHM Co., Ltd. All rights reserved. 20170613 - Rev.002 RQ5E040RP Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 125 /W thJA Thermal resistance, junction - ambient *3 R - - 178 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -30 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -24.1 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -30V, V = 0V - - -1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = -10V, I = -1mA -1.0 - -2.5 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 3.3 - mV/ temperature coefficient T referenced to 25 j V = -10V, I = -4A - 32 45 GS D Static drain - source *4 R V = -4.5V, I = -2A - 45 63 m DS(on) GS D on - state resistance V = -4V, I = -2A - 52 72 GS D R Gate resistance f = 1MHz, open drain - 13 - G Forward Transfer *4 Y V = -10V, I = -4A 2.7 - - S fs DS D Admittance *1 Pw 10s, Duty cycle 1% *2 Mounted on a ceramic boad (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2/11 20170613 - Rev.002 2017 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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ROHM Semiconductor

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