X-On Electronics has gained recognition as a prominent supplier of RQ5H020SPTL mosfet across the USA, India, Europe, Australia, and various other global locations. RQ5H020SPTL mosfet are a product manufactured by ROHM. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

RQ5H020SPTL

RQ5H020SPTL electronic component of ROHM
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See Product Specifications
Part No.RQ5H020SPTL
Manufacturer: ROHM
Category:MOSFET
Description: ROHM Semiconductor MOSFET
Datasheet: RQ5H020SPTL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.2449 ea
Line Total: USD 1.22

Availability - 1081
Ships to you between
Thu. 06 Jun to Tue. 11 Jun
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
2754 - WHS 1


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 5
Multiples : 1
5 : USD 0.6757
100 : USD 0.4867
500 : USD 0.3828
1000 : USD 0.2957

1081 - WHS 2


Ships to you between
Thu. 06 Jun to Tue. 11 Jun

MOQ : 5
Multiples : 5
5 : USD 0.2449
50 : USD 0.1993
150 : USD 0.1798
500 : USD 0.1554
3000 : USD 0.1446
6000 : USD 0.138

9874 - WHS 3


Ships to you between Wed. 05 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1
1 : USD 0.5348
10 : USD 0.4669
100 : USD 0.3289
500 : USD 0.2645
1000 : USD 0.2208
3000 : USD 0.1886
9000 : USD 0.1817

37024 - WHS 4


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 153
Multiples : 1
153 : USD 0.2665
200 : USD 0.2649
500 : USD 0.2242
1000 : USD 0.2129
2000 : USD 0.2112
3000 : USD 0.2015
6000 : USD 0.1917
12000 : USD 0.1804

4891 - WHS 5


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 252
Multiples : 1
252 : USD 0.4055
500 : USD 0.3909
1000 : USD 0.3782
2500 : USD 0.367
5000 : USD 0.3571

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Fall Time
Rise Time
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
Length
Product
Width
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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We proudly offer the RQ5H020SPTL MOSFET at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the RQ5H020SPTL MOSFET.

RQ5H020SP Pch -45V -2.0A Power MOSFET Datasheet Outline V 45V DSS TSMT3 (3) R (Max.) 190m DS(on) (1) I 2.0A D P 1.0W D (2) Features Inner circuit (3) 1) Low on - resistance. 2) Built-in G-S Protection Diode. (1) Gate (2) Source 1 3) Small Surface Mount Package (TSMT3). (3) Drain 4) Pb-free lead plating RoHS compliant 2 1 BODY DIODE 2 ESD PROTECTION DIODE (1) (2) Packaging specifications Packaging Taping Reel size (mm) 180 Application Tape width (mm) 8 DC/DC converters Type Basic ordering unit (pcs) 3,000 Taping code TL Marking FB Absolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V V 45 DSS *1 Continuous drain current I 2.0 A D *2 Pulsed drain current I 8.0 A D,pulse V Gate - Source voltage V 20 GSS *3 P 1.0 W D Power dissipation *4 0.54 W P D T Junction temperature 150 C j T Range of storage temperature 55 to 150 C stg www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2016.03 - Rev.B 1/11Data Sheet RQ5H020SP Thermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 - - 125 C/W R thJA Thermal resistance, junction - ambient *4 R - - 232 C/W thJA Electrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 45 -- V (BR)DSS GS D voltage V Breakdown voltage I = 1mA (BR)DSS D - 43 -mV/C temperature coefficient T referenced to 25C j I V = 45V, V = 0V Zero gate voltage drain current -- 1 A DSS DS GS Gate - Source leakage current I V = 20V, V = 0V -- 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 1.0 - 3.0 V GS (th) DS D V Gate threshold voltage I = 1mA (GS)th D -3.2 - mV/C temperature coefficient T referenced to 25C j V = 10V, I = 2.0A - 130 190 GS D V = 4.5V, I = 2.0A - 180 260 GS D Static drain - source *5 R m DS(on) on - state resistance V = 4.0V, I = 2.0A - 200 280 GS D V = 10V, I = 2.0A, T =125C - 200 - GS D j R Gate input resistannce f = 1MHz, open drain - 21 - G *5 Transconductance V = 10V, I = 2.0A 1.2 4.0 - S g DS D fs *1 Limited only by maximum temperature allowed. *2 Pw 10s, Duty cycle 1% *3 Mounted on a seramic board (30300.8mm) *4 Mounted on a FR4 (12200.8mm) *5 Pulsed www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2016.03 - Rev.B 2/11

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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