Product Information

RF1601NS2DFHTL

RF1601NS2DFHTL electronic component of ROHM

Datasheet
Rectifiers Fast Recvry 200V Vr TO-263S 16A Io
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.2605 ea
Line Total: USD 2.26

665 - Global Stock
Ships to you between
Fri. 31 May to Tue. 04 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
636 - WHS 1


Ships to you between Fri. 31 May to Tue. 04 Jun

MOQ : 1
Multiples : 1
1 : USD 1.541
10 : USD 1.3225
100 : USD 1.0845
500 : USD 0.935
1000 : USD 0.8061
2000 : USD 0.7992
5000 : USD 0.7935
10000 : USD 0.7671

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Maximum Operating Temperature
Qualification
Packaging
Product
Brand
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
LoadingGif

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Additional Infomation About Product

Super Fast Recovery Diode RF1601NS2DFH Datasheet AEC-Q101 Qualified Series Dimensions (Unit : mm) Land Size Figure (Unit : mm) Standard Fast Recovery Applications General rectification TO263S Features Cathode Cathode common dual type 1) Structure ROHM : TO263S (D2PAK) 2) Low switching loss JEITA : SC-83 1 3) Low V : Manufacture Date F Anode Anode Taping Dimensions (Unit : mm) Construction Silicon epitaxial planar type Absolute Maximum Ratings (T = 25C) c Parameter Symbol Conditions Limits Unit V Duty0.5 200 Repetitive peak reverse voltage V RM Reverse voltage V Direct reverse voltage 200 V R 60Hz half sin wave , resistive load T =106C I c Average current 16 A o 1/2Io per diode 60Hz half sin wave, one cycle I Non-repetitive forward surge current 100 A FSM non-repetitive at T=25C, per diode j Operating junction temperature T - 150 C j T Storage temperature - 55 to 150 C stg Electrical Characteristics (T = 25C, per diode) j Parameter Symbol Conditions Min. Typ. Max. Unit V I =8A Forward voltage - 0.85 0.93 V F F I V =200V Reverse current -0.01 10 A R R I =0.5A, I =1A, Irr=0.25I Reverse recovery time trr - 18 30 ns F R R Thermal resistance R Junction to case -- 2.5 C / W th(j-c) www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2016.06 - Rev.A 1/4Data Sheet RF1601NS2DFH Electrical Characteristic Curves 100 100000 T = 150 C j T = 125 C j 10000 10 1000 1 T = 75 C T = 150 C j j 100 T = 125 C j 0.1 10 T = 75 C T = 25 C j j 0.01 T = 25 C j 1 per diode per diode 0.1 0.001 0 200 400 600 800 1000 1200 1400 1600 0 50 100 150 200 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 1000 1000 f = 1MHz T = 25 C j T = 25 C a per diode per diode 100 100 10 I FSM 8.3ms 8.3ms 1cyc. 10 1 0 5 10 15 20 25 30 110 100 NUMBER OF CYCLES REVERSE VOLTAGE : V (V) R I -CYCLE CHARACTERISTICS V -C CHARACTERISTICS FSM R t www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2016.06 - Rev.A 2/4 CAPACITANCE BETWEEN FORWARD CURRENT : I (A) F TERMINALS : C (pF) t PEAK SURGE REVERSE CURRENT : I (nA) R FORWARD CURRENT : I (A) FSM

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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