RRL025P03TR ROHM

RRL025P03TR electronic component of ROHM
RRL025P03TR ROHM
RRL025P03TR MOSFETs
RRL025P03TR  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of RRL025P03TR MOSFETs across the USA, India, Europe, Australia, and various other global locations. RRL025P03TR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. RRL025P03TR
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET Med Pwr, Sw MOSFET P Chan, -30V, -2.5A
Datasheet: RRL025P03TR Datasheet (PDF)
Price (USD)
1: USD 0.6975 ea
Line Total: USD 0.7 
Availability : 3014
  
Ship by Wed. 06 Aug to Fri. 08 Aug
QtyUnit Price
1$ 0.6975
10$ 0.5825
100$ 0.3916
500$ 0.3256
1000$ 0.2816
3000$ 0.2398

Availability 3014
Ship by Wed. 06 Aug to Fri. 08 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.6975
10$ 0.5825
100$ 0.3916
500$ 0.3256
1000$ 0.2816
3000$ 0.2398


Availability 2910
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 324
Multiples : 1
QtyUnit Price
324$ 0.8026


Availability 3959
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 498
Multiples : 1
QtyUnit Price
498$ 0.5226
637$ 0.4082
1000$ 0.3406
3000$ 0.2538


Availability 1230
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 690
Multiples : 1
QtyUnit Price
690$ 0.377
716$ 0.3633
1000$ 0.3515

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RRL025P03TR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RRL025P03TR and other electronic components in the MOSFETs category and beyond.

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RRL025P03 Pch -30V -2.5A Power MOSFET Datasheet l Outline (6) V -30V DSS (5) TUMT6 (4) R (Max.) 75mW DS(on) I (1) -2.5A D (2) (3) P 1.0W D l l Features Inner circuit 1) Low on - resistance. (1) Drain (2) Drain 2) Built-in G-S Protection Diode. (3) Gate (4) Source 3) Small Surface Mount Package (TUMT6). (5) Drain (6) Drain 4) Pb-free lead plating RoHS compliant *1 ESD PROTECTION DIODE *2 BODY DIODE lPackaging specifications Packaging Taping Reel size (mm) 180 lApplication Tape width (mm) 8 DC/DC converters Type Basic ordering unit (pcs) 3,000 Taping code TR Marking UA lAbsolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V V -30 DSS *1 Continuous drain current I 2.5 A D *2 Pulsed drain current A I 10 D,pulse V Gate - Source voltage 20 V GSS *3 P 1.0 W D Power dissipation *4 0.32 W P D T Junction temperature 150 C j T Range of storage temperature -55 to +150 C stg www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.02 - Rev.B 1/11Data Sheet RRL025P03 lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 R - - 125 C/W thJA Thermal resistance, junction - ambient *4 R - - 391 C/W thJA lElectrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -30 - - V (BR)DSS GS D voltage V Breakdown voltage I = -1mA (BR)DSS D - -25 - mV/C temperature coefficient T referenced to 25C j I V = -30V, V = 0V Zero gate voltage drain current - - -1 mA DSS DS GS Gate - Source leakage current I V = 20V, V = 0V - - 10 mA GSS GS DS V V = -10V, I = -1mA Gate threshold voltage -1 - -2.5 V GS (th) DS D V I = -1mA Gate threshold voltage (GS)th D - 3.9 - mV/C temperature coefficient T referenced to 25C j V = -10V, I = -2.5A - 55 75 GS D V = -4.5V, I = -1.2A - 85 115 GS D Static drain - source *5 R mW DS(on) on - state resistance V = -4.0V, I = -1.2A - 95 125 GS D V = -10V, I = -2.5A, T =125C - 95 135 GS D j R Gate input resistannce f = 1MHz, open drain - 24 - W G *5 Transconductance V = -10V, I = -2.5A 2.0 4.4 - S g DS D fs *1 Limited only by maximum temperature allowed. *2 Pw 10ms, Duty cycle 1% *3 Mounted on a seramic board (30300.8mm) *4 Mounted on a FR4 (15200.8mm) *5 Pulsed www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.02 - Rev.B 2/11

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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