RSF010P03TL ROHM

RSF010P03TL electronic component of ROHM
RSF010P03TL ROHM
RSF010P03TL MOSFETs
RSF010P03TL  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of RSF010P03TL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RSF010P03TL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. RSF010P03TL
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET Med Pwr, Sw MOSFET P Chan, -30V, -1A
Datasheet: RSF010P03TL Datasheet (PDF)
Price (USD)
3000: USD 0.1264 ea
Line Total: USD 379.2 
Availability : 0
  
QtyUnit Price
3000$ 0.1264
96000$ 0.0876

Availability 0
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.243
6000$ 0.2273


Availability 0
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.737
10$ 0.6105
100$ 0.4558
500$ 0.3581
1000$ 0.2767


Availability 0
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.0888
6000$ 0.0876
9000$ 0.0869
12000$ 0.0869
15000$ 0.085


Availability 0
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.1264
96000$ 0.0876


Availability 0
Ship by Wed. 06 Aug to Fri. 08 Aug
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.2299
6000$ 0.2145
9000$ 0.2024
24000$ 0.2013

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RSF010P03TL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RSF010P03TL and other electronic components in the MOSFETs category and beyond.

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RSF010P03 Transistors 4V Drive Pch MOSFET RSF010P03 z Structure z Dimensions (Unit : mm) Silicon P-channel MOSFET TUMT3 z Features 1) Low on-resistance. 2) High speed switching. zApplications (1) Gate (2) Source Abbreviated symbol : WX Switching (3) Drain z Packaging specifications z Inner circuit (3) Package Taping Type Code TL Basic ordering unit (pieces) 3000 RSF010P03 (1) 2 1 (2) (1) Gate (2) Source 1 ESD PROTECTION DIODE (3) Drain 2 BODY DIODE z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Drain-source voltage VDSS 30 V Gate-source voltage V 20 V GSS Continuous ID 1 A Drain current 1 Pulsed IDP 4 A Source current Continuous IS 0.3 A (Body diode) 1 Pulsed I 4 A SP 2 Total power dissipation PD 0.8 W Channel temperature Tch 150 C Range of storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board z Thermal resistance Parameter Symbol Limits Unit Channel to ambient Rth(ch-a) 156 C/W Mounted on a ceramic board Rev.B 1/4 0.2Max.RSF010P03 Transistors z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AVGS= 20V, VDS=0V Drain-source breakdown voltage V 30 VI = 1mA, V =0V (BR) DSS D GS Zero gate voltage drain current IDSS 1 AVDS= 30V, VGS=0V Gate threshold voltage VGS (th) 1.0 2.5 V VDS= 10V, ID= 1mA 250 350 m I = 1A, V = 10V D GS Static drain-source on-state RDS (on) 400 560 m ID= 0.5A, VGS= 4.5V resistance 450 630 m ID= 0.5A, VGS= 4.0V Forward transfer admittance Yfs 0.5 SVDS= 10V, ID= 0.5A Input capacitance C 120 pF V = 10V iss DS Output capacitance Coss 27 pF VGS=0V Reverse transfer capacitance Crss 17 pF f=1MHz Turn-on delay time t 8 ns VDD 15V d (on) ID= 0.5A Rise time tr 11 ns VGS= 10V Turn-off delay time td (off) 20 ns RL=30 Fall time tf 12 ns RG =10 Total gate charge Q 1.9 nC V 15V, V = 5V g DD GS Gate-source charge Qgs 0.7 nC ID= 1A Gate-drain charge Qgd0.4 nC RL=15, RG =10 Pulsed z Body diode characteristics (Source-drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V IS= 0.3A, VGS=0V Rev.B 2/4

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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