4V Drive Pch MOSFET RT1E050RP Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TSST8 (8) (7) (6) (5) Features 1) Low on-resistance. (1) (2) (3) (4) 2) High power package. 3) 4V drive. Abbreviated symbol :UD Application Switching Packaging specifications Inner circuit Package Taping (8) (7) (6) (5) Type Code TR 2 Basic ordering unit (pieces) 3000 (1) Drain RT1E050RP (2) Drain 1 (3) Drain (4) Gate (5) Source (6) Drain Absolute maximum ratings (Ta = 25 C) (1) (2) (3) (4) (7) Drain 1 ESD PROTECTION DIODE (8) Drain Parameter Symbol Limits Unit 2 BODY DIODE Drain-source voltage V 30 V DSS Gate-source voltage V 20 V GSS Continuous I 5A D Drain current *1 Pulsed I 20 A DP Continuous I 1A Source current S (Body Diode) *1 Pulsed I 20 A SP *2 Power dissipation P 1.25 W D Channel temperature Tch 150 C Range of storage temperature Tstg 55 to +150 C *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. Thermal resistance Parameter Symbol Limits Unit * Channel to Ambient Rth (ch-a) 100 C / W *Mounted on a ceramic board. www.rohm.com 2010.04 - Rev.A 1/5 2010 ROHM Co., Ltd. All rights reserved.RT1E050RP Data Sheet Electrical characteristics (Ta = 25 C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I -- 10 AV =20V, V =0V GSS GS DS Drain-source breakdown voltage V 30 - - V I =1mA, V =0V (BR)DSS D GS Zero gate voltage drain current I -- 1 AV =30V, V =0V DSS DS GS Gate threshold voltage V 1.0 - 2.5 V V =10V, I =1mA GS (th) DS D -26 36 I =5A, V =10V D GS Static drain-source on-state * R m DS (on) -36 50 I =2.5A, V =4.5V D GS resistance -40 56 I =2.5A, V =4.0V D GS * Forward transfer admittance l Y l 3.1 - - S I =5A, V =10V fs D DS Input capacitance C - 1300 - pF V =10V iss DS Output capacitance C - 180 - pF V =0V oss GS Reverse transfer capacitance C - 160 - pF f=1MHz rss Turn-on delay time t * - 10 - ns I =2.5A, V 15V d(on) D DD Rise time t * - 15 - ns V =10V r GS Turn-off delay time t * - 90 - ns R =6.0 d(off) L * Fall time t - 50 - ns R =10 f G * Total gate charge Q - 13 - nC I =5A, V 15V g D DD * Gate-source charge Q - 3.5 - nC V =5V R =3 gs GS L Gate-drain charge Q * - 4.5 - nC R =10 gd G *Pulsed Body diode characteristics (Source-Drain) (Ta = 25 C) Parameter Symbol Min. Typ. Max. Unit Conditions * Forward Voltage V -- 1.2 V I =5A, V =0V SD s GS *Pulsed www.rohm.com 2/5 2010.04- Rev.A 2010 ROHM Co., Ltd. All rights reserved.