RT1E050RPTR ROHM

RT1E050RPTR electronic component of ROHM
RT1E050RPTR ROHM
RT1E050RPTR MOSFETs
RT1E050RPTR  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of RT1E050RPTR MOSFETs across the USA, India, Europe, Australia, and various other global locations. RT1E050RPTR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. RT1E050RPTR
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET 4V Drive Pch MOSFET Drive Pch
Datasheet: RT1E050RPTR Datasheet (PDF)
Price (USD)
N/A

Obsolete

Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.7423
10$ 0.5809
100$ 0.3863
500$ 0.3124
1000$ 0.2488
3000$ 0.2284
9000$ 0.209
24000$ 0.2056
45000$ 0.2022
N/A

Obsolete

Availability 0
MOQ : 177
Multiples : 1
QtyUnit Price
177$ 0.6227
250$ 0.5977
500$ 0.5761
1000$ 0.5359
2500$ 0.52
N/A

Obsolete

Availability 0
MOQ : 244
Multiples : 1
QtyUnit Price
244$ 0.2754
N/A

Obsolete

Availability 0
MOQ : 177
Multiples : 1
QtyUnit Price
177$ 0.6227
250$ 0.5977
500$ 0.5761
1000$ 0.5359
2500$ 0.52
N/A

Obsolete

Availability 0
MOQ : 2101
Multiples : 1
QtyUnit Price
2101$ 0.4867
N/A

Obsolete

Availability 0
MOQ : 121
Multiples : 1
QtyUnit Price
121$ 0.3364
200$ 0.3347
500$ 0.3105
1000$ 0.3007
2000$ 0.299
3000$ 0.2925
N/A

Obsolete

Availability 0
MOQ : 2101
Multiples : 1
QtyUnit Price
2101$ 0.4867
N/A

Obsolete
   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RT1E050RPTR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RT1E050RPTR and other electronic components in the MOSFETs category and beyond.

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4V Drive Pch MOSFET RT1E050RP Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TSST8 (8) (7) (6) (5) Features 1) Low on-resistance. (1) (2) (3) (4) 2) High power package. 3) 4V drive. Abbreviated symbol :UD Application Switching Packaging specifications Inner circuit Package Taping (8) (7) (6) (5) Type Code TR 2 Basic ordering unit (pieces) 3000 (1) Drain RT1E050RP (2) Drain 1 (3) Drain (4) Gate (5) Source (6) Drain Absolute maximum ratings (Ta = 25 C) (1) (2) (3) (4) (7) Drain 1 ESD PROTECTION DIODE (8) Drain Parameter Symbol Limits Unit 2 BODY DIODE Drain-source voltage V 30 V DSS Gate-source voltage V 20 V GSS Continuous I 5A D Drain current *1 Pulsed I 20 A DP Continuous I 1A Source current S (Body Diode) *1 Pulsed I 20 A SP *2 Power dissipation P 1.25 W D Channel temperature Tch 150 C Range of storage temperature Tstg 55 to +150 C *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. Thermal resistance Parameter Symbol Limits Unit * Channel to Ambient Rth (ch-a) 100 C / W *Mounted on a ceramic board. www.rohm.com 2010.04 - Rev.A 1/5 2010 ROHM Co., Ltd. All rights reserved.RT1E050RP Data Sheet Electrical characteristics (Ta = 25 C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I -- 10 AV =20V, V =0V GSS GS DS Drain-source breakdown voltage V 30 - - V I =1mA, V =0V (BR)DSS D GS Zero gate voltage drain current I -- 1 AV =30V, V =0V DSS DS GS Gate threshold voltage V 1.0 - 2.5 V V =10V, I =1mA GS (th) DS D -26 36 I =5A, V =10V D GS Static drain-source on-state * R m DS (on) -36 50 I =2.5A, V =4.5V D GS resistance -40 56 I =2.5A, V =4.0V D GS * Forward transfer admittance l Y l 3.1 - - S I =5A, V =10V fs D DS Input capacitance C - 1300 - pF V =10V iss DS Output capacitance C - 180 - pF V =0V oss GS Reverse transfer capacitance C - 160 - pF f=1MHz rss Turn-on delay time t * - 10 - ns I =2.5A, V 15V d(on) D DD Rise time t * - 15 - ns V =10V r GS Turn-off delay time t * - 90 - ns R =6.0 d(off) L * Fall time t - 50 - ns R =10 f G * Total gate charge Q - 13 - nC I =5A, V 15V g D DD * Gate-source charge Q - 3.5 - nC V =5V R =3 gs GS L Gate-drain charge Q * - 4.5 - nC R =10 gd G *Pulsed Body diode characteristics (Source-Drain) (Ta = 25 C) Parameter Symbol Min. Typ. Max. Unit Conditions * Forward Voltage V -- 1.2 V I =5A, V =0V SD s GS *Pulsed www.rohm.com 2/5 2010.04- Rev.A 2010 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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