Product Information

RTE002P02TL

RTE002P02TL electronic component of ROHM

Datasheet
MOSFET P-CH 20V 200MA SOT416
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.0752 ea
Line Total: USD 0.38

2526 - Global Stock
Ships to you between
Thu. 30 May to Tue. 04 Jun
MOQ: 5  Multiples: 5
Pack Size: 5

 More Buying Options & Price Grid(s)

Availability Price Quantity
1377 - WHS 1


Ships to you between
Thu. 30 May to Tue. 04 Jun

MOQ : 5
Multiples : 5
5 : USD 0.1046
50 : USD 0.0769
150 : USD 0.0608
500 : USD 0.055
3000 : USD 0.0506
6000 : USD 0.0482

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Series
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
LoadingGif

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Additional Infomation About Product

The RTE002P02TL P-channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is a surface mountable transistor from ROHM. It provides 20 volts of drain source voltage with a continuous drain current of 200 milliamperes. Its package is SOT416, an ultra-small surface mount package. This MOSFET is primarily used for power management applications. It is ideal for circuits that require low power dissipation. It has a breakdown voltage of 25 volts and an ON-resistance of 0.45ohms. The gate to source voltage of this MOSFET is 5 volts, which is low enough to be used in battery operated devices. The device also features fast switching characteristics, making it ideal for high frequency applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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