Product Information

RT1A060APTR

Hot RT1A060APTR electronic component of ROHM

Datasheet
Trans MOSFET P-CH Si 12V 6A Automotive 8-Pin TSST T/R

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

184: USD 0.2254 ea
Line Total: USD 41.47

2817 - Global Stock
Ships to you between
Thu. 23 May to Wed. 29 May
MOQ: 184  Multiples: 1
Pack Size: 1
Availability Price Quantity
2211 - WHS 1


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 1
Multiples : 1
1 : USD 0.6005
10 : USD 0.5183
100 : USD 0.456
1000 : USD 0.3925
3000 : USD 0.2492
6000 : USD 0.243
9000 : USD 0.2354
24000 : USD 0.233

2817 - WHS 2


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 184
Multiples : 1
184 : USD 0.2254
200 : USD 0.2237
500 : USD 0.2191

     
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Power Dissipation
Pin Count
Mounting
Operating Temperature Classification
Operating Temp Range
Type
Rad Hardened
Polarity
Drain-Source On-Volt
Number Of Elements
Gate-Source Voltage Max
Continuous Drain Current
Configuration
Series
Transistor Type
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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RT1A060AP Datasheet Pch -12V -6A Middle Power MOSFET llOutline TSST8 V -12V DSS R (Max.) 19m DS(on) I 6A D P 1.25W D llInner circuit llFeatures 1) Low on - resistance. 2) -1.5V Drive. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TSST8). 5) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TR Marking SG llAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit V Drain - Source voltage -12 V DSS I Continuous drain current 6 A D *1 I Pulsed drain current 18 A D,pulse V Gate - Source voltage 0 -8 V GSS *2 P 1.25 W D Power dissipation *3 P 0.6 W D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 1/11 20150730 - Rev.001 RT1A060AP Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 100 /W thJA Thermal resistance, junction - ambient *3 R - - 208 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -12 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -5.0 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -12V, V = 0V - - -10 A DSS DS GS drain current Gate - Source leakage current I V = -8V, V = 0V - - -10 A GSS GS DS V Gate threshold voltage V = -6V, I = -1mA -0.3 - -1.0 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 2.7 - mV/ temperature coefficient T referenced to 25 j V = -4.5V, I = -6A - 14 19 GS D V = -2.5V, I = -3A - 17 24 GS D Static drain - source *4 R m DS(on) on - state resistance V = -1.8V, I = -3A - 22 33 GS D V = -1.5V, I = -1.2A - 27 54 GS D R Gate input resistance f = 1MHz, open drain - 8 - G Forward Transfer *4 Y V = -6V, I = -6A 9 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Mounted on a ceramic board (30x30x0.8mm) *3 Mounted on a FR4 (20x20x0.8mm) *4 Pulsed www.rohm.com 2/11 20150730 - Rev.001 2015 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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