RT1A060APTR ROHM

RT1A060APTR electronic component of ROHM
RT1A060APTR ROHM
RT1A060APTR MOSFETs
RT1A060APTR  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of RT1A060APTR MOSFETs across the USA, India, Europe, Australia, and various other global locations. RT1A060APTR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. RT1A060APTR
Manufacturer: ROHM
Category: MOSFETs
Description: Trans MOSFET P-CH Si 12V 6A Automotive 8-Pin TSST T/R
Datasheet: RT1A060APTR Datasheet (PDF)
Price (USD)
1: USD 0.4712 ea
Line Total: USD 0.47 
Availability : 2114
  
Ship by Wed. 06 Aug to Fri. 08 Aug
QtyUnit Price
1$ 0.4712
10$ 0.3045
3000$ 0.2599
6000$ 0.2449
9000$ 0.2391
24000$ 0.2368

Availability 2114
Ship by Wed. 06 Aug to Fri. 08 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.4712
10$ 0.3045
3000$ 0.2599
6000$ 0.2449
9000$ 0.2391
24000$ 0.2368


Availability 2817
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 702
Multiples : 1
QtyUnit Price
702$ 0.389
889$ 0.3071
931$ 0.2935
1000$ 0.2921

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Power Dissipation
Pin Count
Mounting
Operating Temperature Classification
Operating Temp Range
Type
Rad Hardened
Polarity
Drain-Source On-Volt
Number Of Elements
Gate-Source Voltage Max
Continuous Drain Current
Configuration
Series
Transistor Type
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RT1A060APTR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RT1A060APTR and other electronic components in the MOSFETs category and beyond.

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RT1A060AP Datasheet Pch -12V -6A Middle Power MOSFET llOutline TSST8 V -12V DSS R (Max.) 19m DS(on) I 6A D P 1.25W D llInner circuit llFeatures 1) Low on - resistance. 2) -1.5V Drive. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TSST8). 5) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TR Marking SG llAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit V Drain - Source voltage -12 V DSS I Continuous drain current 6 A D *1 I Pulsed drain current 18 A D,pulse V Gate - Source voltage 0 -8 V GSS *2 P 1.25 W D Power dissipation *3 P 0.6 W D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 1/11 20150730 - Rev.001 RT1A060AP Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 100 /W thJA Thermal resistance, junction - ambient *3 R - - 208 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -12 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -5.0 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -12V, V = 0V - - -10 A DSS DS GS drain current Gate - Source leakage current I V = -8V, V = 0V - - -10 A GSS GS DS V Gate threshold voltage V = -6V, I = -1mA -0.3 - -1.0 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 2.7 - mV/ temperature coefficient T referenced to 25 j V = -4.5V, I = -6A - 14 19 GS D V = -2.5V, I = -3A - 17 24 GS D Static drain - source *4 R m DS(on) on - state resistance V = -1.8V, I = -3A - 22 33 GS D V = -1.5V, I = -1.2A - 27 54 GS D R Gate input resistance f = 1MHz, open drain - 8 - G Forward Transfer *4 Y V = -6V, I = -6A 9 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Mounted on a ceramic board (30x30x0.8mm) *3 Mounted on a FR4 (20x20x0.8mm) *4 Pulsed www.rohm.com 2/11 20150730 - Rev.001 2015 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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