Product Information

RT1E040RPTR

RT1E040RPTR electronic component of ROHM

Datasheet
MOSFET 4V Drive Pch MOSFET Drive Pch

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.8388 ea
Line Total: USD 0.84

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 3000
Multiples : 3000
3000 : USD 0.2005
9000 : USD 0.1994
24000 : USD 0.1958
45000 : USD 0.1922

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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RT1E040RP Pch -30V -4A Power MOSFET Datasheet lOutline (8) V -30V (7) DSS TSST8 (6) R (Max.) 45mW (5) DS(on) (1) I -4A D (2) (3) P 1.25W (4) D lFeatures lInner circuit 1) Low on - resistance. (1) Drain (5) Source 2) Built-in G-S Protection Diode. (2) Drain (6) Drain (3) Drain (7) Drain 3) Small Surface Mount Package (TSST8). (4) Gate (8) Drain 4) Pb-free lead plating RoHS compliant *1 ESD PROTECTION DIODE *2 BODY DIODE lPackaging specifications Packaging Taping Reel size (mm) 180 lApplication Tape width (mm) 8 DC/DC converters Type Basic ordering unit (pcs) 3,000 Taping code TR Marking UG lAbsolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V V -30 DSS *1 Continuous drain current I 4 A D *2 Pulsed drain current A I 16 D,pulse V Gate - Source voltage 20 V GSS *3 P 1.25 W D Power dissipation *4 0.55 W P D T Junction temperature 150 C j T Range of storage temperature -55 to +150 C stg www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.09 - Rev.B 1/11Data Sheet RT1E040RP lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 R - - 100 C/W thJA Thermal resistance, junction - ambient *4 R - - 227 C/W thJA lElectrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -30 - - V (BR)DSS GS D voltage V Breakdown voltage I = -1mA (BR)DSS D - -25 - mV/C temperature coefficient T referenced to 25C j I V = -30V, V = 0V Zero gate voltage drain current - - -1 mA DSS DS GS Gate - Source leakage current I V = 20V, V = 0V - - 10 mA GSS GS DS V V = -10V, I = -1mA Gate threshold voltage -1 - -2.5 V GS (th) DS D V I = -1mA Gate threshold voltage (GS)th D - 3.9 - mV/C temperature coefficient T referenced to 25C j V = -10V, I = -4A - 32 45 GS D V = -4.5V, I = -2A - 45 63 GS D Static drain - source *5 R mW DS(on) on - state resistance V = -4.0V, I = -2A - 52 72 GS D V = -10V, I = -4A, T =125C - 47 66 GS D j R Gate input resistannce f = 1MHz, open drain - 13 - W G *5 Transconductance V = -10V, I = -4A 2.7 7.0 - S g DS D fs *1 Limited only by maximum temperature allowed. *2 Pw 10ms, Duty cycle 1% *3 Mounted on a ceramic board (30300.8mm) *4 Mounted on a FR4 (20200.8mm) *5 Pulsed www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.09 - Rev.B 2/11

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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