RTL020P02FRARTL020P02 Transistors AEC-Q101 Qualified 2.5V Drive Pch MOSFET RTL020P02FRA RTL020P02 z Dimensions (Unit : mm) z Structure Silicon P-channel TUMT6 MOSFET z Features 1) Low on-resistance. (180m at 2.5V) 2) High power package. 3) High speed switching. 4) Low voltage drive. (2.5V) Abbreviated symbol : WU z Applications DC-DC converter z Packaging specifications z Equivalent circuit Package Taping (6) (5) (4) Type Code TR Quantity (pcs) 3000 2 RRTL020P02TL020P02FRA 1 (1) Drain (2) Drain (3) Gate (1) (2) (3) (4) Source (5) Drain 1 ESD PROTECTION DIODE (6) Drain 2 BODY DIODE z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Drain-source voltage V 20 V DSS V 12 V Gate-source voltage GSS Continuous ID 2 A Drain current 1 Pulsed IDP 8 A Source current Continuous I 0.8 A S 1 (Body diode) I 8 A Pulsed SP 2 Total power dissipation PD 1 W Channel temperature Tch 150 C Range of Storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board z Thermal resistance Parameter Symbol Limits Unit Channel to ambient Rth(ch-a) 125 C / W Mounted on a ceramic board. 20190527-Rev.C1/4 0.2Max.RTL020P02FRA RTL020P02 Transistors z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AVGS=12V, VDS=0V Drain-source breakdown voltage V(BR) DSS 20 VID=1mA, VGS=0V Zero gate voltage drain current I 1 AV =20V, V =0V DSS DS GS Gate threshold voltage VGS (th) 0.7 2.0 V VDS=10V, ID=1mA 100 135 m ID=2A, VGS=4.5V Static drain-source on-state RDS (on) 110 150 m ID=2A, VGS=4V resistance 180 250 m I =1A, V =2.5V D GS Forward transfer admittance Yfs 1.2 SVDS=10V, ID=1A Input capacitance Ciss 430 pF VDS=10V Output capacitance C 80 pF V =0V oss GS Reverse transfer capacitance Crss 55 pF f=1MHz Turn-on delay time td (on) 11 ns ID=1A VDD 15V Rise time tr 13 ns VGS=4.5V Turn-off delay time t 38 ns d (off) RL=15 Fall time tf 12 ns RG=10 Total gate charge Qg 4.9 nC VDD 15V RL=7.5 Gate-source charge Q 1.2 nC V =4.5V RG=10 gs GS Gate-drain charge Qgd 1.3 nC ID=2A Pulsed z Body diode characteristics (Source-drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V IS=0.8A, VGS=0V 20190527-Rev.C2/4