RTL035N03FRATR ROHM

RTL035N03FRATR electronic component of ROHM
RTL035N03FRATR ROHM
RTL035N03FRATR MOSFETs
RTL035N03FRATR  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of RTL035N03FRATR MOSFETs across the USA, India, Europe, Australia, and various other global locations. RTL035N03FRATR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. RTL035N03FRATR
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET Nch 30V Vds 3.5A 0.056Rds(on) 4.6Qg
Datasheet: RTL035N03FRATR Datasheet (PDF)
Price (USD)
1: USD 0.4645 ea
Line Total: USD 0.46 
Availability : 0
  
QtyUnit Price
1$ 0.4645
10$ 0.3965
100$ 0.2738
500$ 0.2217
1000$ 0.1793
3000$ 0.157
6000$ 0.1512
9000$ 0.1501

Availability 0
Ship by Mon. 10 Nov to Wed. 12 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.4645
10$ 0.3965
100$ 0.2738
500$ 0.2217
1000$ 0.1793
3000$ 0.157
6000$ 0.1512
9000$ 0.1501

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
LoadingGif
 
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We are delighted to provide the RTL035N03FRATR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RTL035N03FRATR and other electronic components in the MOSFETs category and beyond.

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RTL035N03FRA Datasheet Nch 30V 3.5A Small Signal MOSFET llOutline SOT-363T V 30V DSS SC-113DA R (Max.) 56m DS(on) TUMT6 I 3.5A D P 1.0W D llInner circuit llFeatures 1) Low on - resistance 2) Space saving, small surface mount package (TUMT6) 3) Pb-free lead plating RoHS compliant 4) AEC-Q101 Qualified llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TR Marking PM llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 30 V DSS I Continuous drain current 3.5 A D *1 I Pulsed drain current 14 A DP V Gate - Source voltage 12 V GSS *2 P 1.0 W D Power dissipation *3 P 0.91 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2018 ROHM Co., Ltd. All rights reserved. 20180328 - Rev.001 RTL035N03FRA Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 125 /W thJA Thermal resistance, junction - ambient *3 R - - 137 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 29 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current I V = 12V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 0.5 - 1.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -1.6 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 3.5A - 40 56 GS D Static drain - source *4 R V = 4.0V, I = 3.5A - 42 59 m DS(on) GS D on - state resistance V = 2.5V, I = 3.5A - 56 79 GS D R Gate resistance f = 1MHz, open drain - 9.3 - G Forward Transfer *4 Y V = 10V, I = 3.5A 3 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2/11 20180328 - Rev.001 2018 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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