Product Information

UT6MA3TCR

UT6MA3TCR electronic component of ROHM

Datasheet
MOSFET 20V Nch+Pch Si MOSFET
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4397 ea
Line Total: USD 0.44

1238 - Global Stock
Ships to you between
Thu. 30 May to Tue. 04 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1238 - WHS 1


Ships to you between
Thu. 30 May to Tue. 04 Jun

MOQ : 1
Multiples : 1
1 : USD 0.4262
10 : USD 0.3123
30 : USD 0.2506
100 : USD 0.2166
500 : USD 0.2016
1000 : USD 0.1925

630 - WHS 2


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 1
Multiples : 1
1 : USD 0.9124
10 : USD 0.8033
100 : USD 0.5684
500 : USD 0.4889
1000 : USD 0.4283
3000 : USD 0.3619

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Taric
Category
Brand Category
LoadingGif

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Additional Infomation About Product

The UT6MA3TCR is a 20V Nch+Pch silicon MOSFET manufactured by ROHM. It is a MOSFET (metal oxide semiconductor field effect transistor) which is a type of transistor used to switch electrical signals or create power amplification. This device features a maximum drain-source voltage (VDSS) of 20V and a drain current (ID) of 3.3A. It also has the ability to be driven with a PWM signal, making it a useful part for digital control systems. The drain to source on resistance (RDS (ON)) is typically 4.5mO making it an efficient and low power MOSFET. The gate to source threshold voltage (Vth) is typically 2.2V and the gate to source voltage is 20V. This MOSFET is designed for high frequency applications up to 4GHz with a maximum junction temperature of 150°C ensuring reliable performance.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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