AUTOMOTIVE GRADE Features HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance V = 55V DSS 175C Operating Temperature Fast Switching R = 4.9m G DS(on) Repetitive Avalanche Allowed up to Tjmax Lead-Free S I = 120A D Automotive Qualified * Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. Standard Pack Base Part Number Package Type Orderable Part Number Form Quantity Tube 50 AUIRF1405ZS-7P AUIRF1405ZS-7P D2Pak- 7 Pin Tape and Reel Left 800 AUIRF1405ZS-7TRL Absolute Maximum Ratings functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. % & ()* Parameter Max. Units 150 I T = 25C Continuous Drain Current, V 10V (Silicon Limited) D C GS 100 I T = 100C Continuous Drain Current, V 10V (See Fig. 9) D C GS A 120 I T = 25C Continuous Drain Current, V 10V (Package Limited) D C GS I Pulsed Drain Current 590 DM P T = 25C Maximum Power Dissipation 230 W D C Linear Derating Factor 1.5 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy (Thermally Limited) 250 mJ AS I Avalanche Current See Fig.12a,12b,15,16 A AR E Repetitive Avalanche Energy mJ AR T Operating Junction and -55 to + 175 J C T Storage Temperature Range STG 300 (1.6mm from case ) Soldering Temperature, for 10 seconds Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 0.65 JC C/W R Junction-to-Ambient (PCB Mount, steady state) 40 JA HEXFET is a registered trademark of International Rectifier. *Qualification standards can be found at Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 55 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.054 V/C Reference to 25C, I = 1mA DSS J D m R SMD Static Drain-to-Source On-Resistance 3.7 4.9 V = 10V, I = 88A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 150A GS(th) DS GS D Forward Transconductance gfs 108 S V = 10V, I = 88A DS D I Drain-to-Source Leakage Current 20 A V = 55V, V = 0V DSS DS GS 250 V = 55V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 200 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -200 V = -20V GS Q Total Gate Charge 150 230 nC I = 88A g D Q Gate-to-Source Charge 37 V = 44V gs DS Q Gate-to-Drain Mille) Charge 64 V = 10V gd GS t Turn-On Delay Time 16 ns V = 28V d(on) DD t Rise Time 140 I = 88A r D t Turn-Off Delay Time 170 R = 5.0 d(off) G t Fall Time 130 V = 10V f GS L Internal Drain Inductance 4.5 nH Between lead, D D 6mm (0.25in.) L Internal Source Inductance 7.5 from package S G and center of die contact S C Input Capacitance 5360 pF V = 0V iss GS C Output Capacitance 1310 V = 25V oss DS C Reverse Transfer Capacitance 340 = 1.0MHz, See Fig. 5 rss C Output Capacitance 6080 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C Output Capacitance 920 V = 0V, V = 44V, = 1.0MHz oss GS DS C eff. Effective Output Capacitance 1700 V = 0V, V = 0V to 44V oss GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current 150 MOSFET symbol S D (Body Diode) A showing the G I Pulsed Source Current 590 integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage T = 25C, I = 88A, V = 0V SD 1.3 V J S GS t Reverse Recovery Time T = 25C, I = 88A, V = 28V J F DD rr 63 95 ns di/dt = 100A/s Q Reverse Recovery Charge 160 240 nC rr Repetitive rating pulse width limited by Limited by T , see Fig.12a, 12b, 15, 16 for typical Jmax max. junction temperature. (See fig. 11). repetitive avalanche performance. Limited by T , starting T = 25C, 2 Jmax J This is applied to D Pak, when mounted on 1 square PCB L=0.064mH, R = 25, I = 88A, V =10V. GS ( FR-4 or G-10 Material ). For recommended footprint and G AS Part not recommended for use above this value. soldering techniques refer to application note AN-994. Pulse width 1.0ms duty cycle 2%. R is measured at T of approximately 90C. J C eff. is a fixed capacitance that gives the same oss charging time as C while V is rising from 0 to 80% oss DS V . DSS & &,+ - . / 0 / &1* &,+