RTQ025P02HZGTR ROHM

RTQ025P02HZGTR electronic component of ROHM
RTQ025P02HZGTR ROHM
RTQ025P02HZGTR MOSFETs
RTQ025P02HZGTR  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of RTQ025P02HZGTR MOSFETs across the USA, India, Europe, Australia, and various other global locations. RTQ025P02HZGTR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. RTQ025P02HZGTR
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET -20V P-CHANNEL -2.5A
Datasheet: RTQ025P02HZGTR Datasheet (PDF)
Price (USD)
1: USD 0.9925 ea
Line Total: USD 0.99 
Availability : 708
  
Ship by Thu. 11 Sep to Mon. 15 Sep
QtyUnit Price
1$ 0.9925
10$ 0.6938
100$ 0.4235
500$ 0.3476
1000$ 0.3201
3000$ 0.2849
6000$ 0.2684
9000$ 0.2596

Availability 708
Ship by Thu. 11 Sep to Mon. 15 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.9925
10$ 0.6938
100$ 0.4235
500$ 0.3476
1000$ 0.3201
3000$ 0.2849
6000$ 0.2684
9000$ 0.2596

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RTQ025P02HZGTR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RTQ025P02HZGTR and other electronic components in the MOSFETs category and beyond.

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RTQ025P02HZG Datasheet Pch -20V -2.5A Small Signal MOSFET llOutline SOT-457T V -20V DSS SC-95 R (Max.) 100m DS(on) TSMT6 I 2.5A D P 1.25W D llInner circuit llFeatures 1) Low on - resistance 2) Built-in G-S protection diode 3) Small surface mount package(TSMT6) 4) Pb-free lead plating RoHS compliant 5) AEC-Q101 Qualified llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TR Marking TQ llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V -20 V DSS I Continuous drain current 2.5 A D *1 I Pulsed drain current 10 A DP V Gate - Source voltage 12 V GSS *2 P 1.25 W D Power dissipation *3 P 0.95 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2018 ROHM Co., Ltd. All rights reserved. 20180918 - Rev.001 RTQ025P02HZG Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 100 /W thJA Thermal resistance, junction - ambient *3 R - - 132 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -20 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -18.7 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -20V, V = 0V - - -1 A DSS DS GS drain current I V = 12V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = -10V, I = -1mA -0.7 - -2.0 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 2.3 - mV/ temperature coefficient T referenced to 25 j V = -4.5V, I = -2.5A - 72 100 GS D Static drain - source *4 R V = -4.0V, I = -2.5A - 80 110 m DS(on) GS D on - state resistance V = -2.5V, I = -1.2A - 140 190 GS D R Gate resistance f = 1MHz, open drain - 10 - G Forward Transfer *4 Y V = -10V, I = -1.2A 2.0 - - S fs DS D Admittance *1 Pw 10s, Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2/11 20180918 - Rev.001 2018 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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