RV2C014BCT2CL ROHM

RV2C014BCT2CL electronic component of ROHM
RV2C014BCT2CL ROHM
RV2C014BCT2CL MOSFETs
RV2C014BCT2CL  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of RV2C014BCT2CL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RV2C014BCT2CL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.RV2C014BCT2CL
Manufacturer:ROHM
Category:MOSFETs
Description:MOSFET P-Chnl -20V Vdss -/+1.4A Id RASMID
Datasheet:RV2C014BCT2CL Datasheet (PDF)
Shipping Charges:Click here for details
AI Image
Price (USD)
  
5: USD 0.1934 ea
Line Total: USD 0.97 
Availability : 5029
  
Ship by Tue. 23 Jun to Mon. 29 Jun
QtyUnit Price
5$ 0.1934
50$ 0.1556
150$ 0.1026
500$ 0.0826
2500$ 0.0652
5000$ 0.0613
  

Availability5029
Ship by Tue. 23 Jun to Mon. 29 Jun
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.1934
50$ 0.1556
150$ 0.1026
500$ 0.0826
2500$ 0.0652
5000$ 0.0613

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Product
Series
Transistor Type
Type
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Brand Category
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We are delighted to provide the RV2C014BCT2CL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RV2C014BCT2CL and other electronic components in the MOSFETs category and beyond.

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RV2C014BC Datasheet Pch -20V -1.4A Small Signal MOSFET llOutline DFN1006-3 V -20V DSS SC-101 R (Max.) 300m DS(on) VML1006 I 1.4A D P 600mW D llInner circuit llFeatures 1) Low on - Resistance, High Current. 2) High Power small mold Package (DFN1006). 3) Pb-free lead plating RoHS compliant. 4) Halogen Free. llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 8000 Taping code T2CL Marking SZ llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V -20 V DSS *2 V = -4.5V I 1.4 A GS D *2 V = -2.5V I Continuous drain current 1.2 A GS D *2 V = -1.8V I 0.9 A GS D *3 I 0.7 A D *1 I Pulsed drain current 2.8 A DP V Gate - Source voltage 8 V GSS *2 P 600 mW D Power dissipation *3 P 400 mW D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 1/11 20151110 - Rev.003 RV2C014BC Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 208 /W thJA Thermal resistance, junction - ambient *3 R - - 312 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -20 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -10.3 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -20V, V = 0V - - -1 A DSS DS GS drain current I Gate - Source leakage current V = 8V, V = 0V - - 100 nA GSS GS DS V V = V , I = -100A Gate threshold voltage -0.3 - -1.0 V GS(th) DS GS D V I = -100A GS(th) D Gate threshold voltage - 1.7 - mV/ temperature coefficient T referenced to 25 j V = -4.5V, I = -1.4A - 220 300 GS D Static drain - source *4 R V = -2.5V, I = -1.2A - 280 390 m DS(on) GS D on - state resistance V = -1.8V, I = -0.9A - 370 700 GS D Forward Transfer *4 Y V = -5V, I = -0.1A 0.3 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Mounted on a FR4 Board (25.4mm x 25.4mm x 0.8mm, Cu Pad : 645mm2), Pw5s *3 Mounted on a FR4 Board (20.0mm x 12.0mm x 0.8mm, Cu Pad : 45mm2) *4 Pulsed www.rohm.com 2/11 20151110 - Rev.003 2015 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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