RV3C002UNT2CL ROHM

RV3C002UNT2CL electronic component of ROHM
RV3C002UNT2CL ROHM
RV3C002UNT2CL MOSFETs
RV3C002UNT2CL  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of RV3C002UNT2CL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RV3C002UNT2CL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. RV3C002UNT2CL
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET 20V Vdss 2ohm Rds on Id +/-150mA N-Ch
Datasheet: RV3C002UNT2CL Datasheet (PDF)
Price (USD)
1: USD 0.475 ea
Line Total: USD 0.48 
Availability : 25622
  
Ship by Mon. 10 Nov to Wed. 12 Nov
QtyUnit Price
1$ 0.475
10$ 0.2713
100$ 0.1392
500$ 0.1276
5000$ 0.1133
8000$ 0.1133

Availability 25622
Ship by Mon. 10 Nov to Wed. 12 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.475
10$ 0.2713
100$ 0.1392
500$ 0.1276
5000$ 0.1133
8000$ 0.1133


Availability 1633
Ship by Wed. 12 Nov to Tue. 18 Nov
MOQ : 905
Multiples : 1
QtyUnit Price
905$ 0.2873
939$ 0.2769
1000$ 0.2679


Availability 6183
Ship by Wed. 12 Nov to Tue. 18 Nov
MOQ : 446
Multiples : 1
QtyUnit Price
446$ 0.5837
820$ 0.3172
1588$ 0.1638

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Product
Series
Transistor Type
Type
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RV3C002UNT2CL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RV3C002UNT2CL and other electronic components in the MOSFETs category and beyond.

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RV3C002UN Datasheet Nch 20V 150mA Small Signal MOSFET llOutline DFN0604-3 V 20V DSS R (Max.) 2.0 DS(on) VML0604 I 150mA D P 100mW D llFeatures llInner circuit 1) Ultra Small Package (0.60.40.36mm) 2) Low voltage drive (1.5V) makes this device ideal for portable equipment. 3) Drive circuits can be simple. 4) Built-in ESD Protection Diode. llApplication llPackaging specifications Embossed Switching Packing Tape Level shifter Reel size (mm) 180 Tape width (mm) 8 Type Basic ordering unit (pcs) 8000 Taping code T2CL Marking RY llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 20 V DSS *1 I Continuous drain current 150 mA D *2 Pulsed drain current I 600 mA DP V Gate - Source voltage 10 V GSS *3 Power dissipation P 100 mW D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 1/10 20161101 - Rev.002 RV3C002UN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 Thermal resistance, junction - ambient R - - 1250 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 20 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 29 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 20V, V = 0V - - 1 A DSS DS GS drain current I Gate - Source leakage current V = 8V, V = 0V - - 10 A GSS GS DS V = 10V, I = 100A 0.3 - 0.8 DS D V Gate threshold voltage V GS(th) V = 10V, I = 100A DS D - - 0.840 T = -25 a V I = 1mA GS(th) D Gate threshold voltage - -1.6 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 150mA - 1.4 2.0 GS D Static drain - source *4 R V = 2.5V, I = 150mA - 1.7 2.6 DS(on) GS D on - state resistance V = 1.5V, I = 20mA - 2.7 5.4 GS D *1 Limited only by maximum temperature allowed. *2 Pw10s , Duty cycle 1% *3 Each therminal mounted on a reference land *4 Pulsed www.rohm.com 2/10 20161101 - Rev.002 2016 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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