X-On Electronics has gained recognition as a prominent supplier of RV3C002UNT2CL mosfet across the USA, India, Europe, Australia, and various other global locations. RV3C002UNT2CL mosfet are a product manufactured by ROHM. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

RV3C002UNT2CL ROHM

RV3C002UNT2CL electronic component of ROHM
Images are for reference only
See Product Specifications
Part No.RV3C002UNT2CL
Manufacturer: ROHM
Category:MOSFET
Description: MOSFET 20V Vdss 2ohm Rds on Id +/-150mA N-Ch
Datasheet: RV3C002UNT2CL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3301 ea
Line Total: USD 0.33

Availability - 63257
Ships to you between
Thu. 13 Jun to Mon. 17 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
50 - WHS 1


Ships to you between
Fri. 14 Jun to Wed. 19 Jun

MOQ : 1
Multiples : 1
1 : USD 0.1767
10 : USD 0.1577
30 : USD 0.1479
100 : USD 0.1388
500 : USD 0.1332
1000 : USD 0.13

63257 - WHS 2


Ships to you between Thu. 13 Jun to Mon. 17 Jun

MOQ : 1
Multiples : 1
1 : USD 0.3301
10 : USD 0.2426
100 : USD 0.1518
1000 : USD 0.1184
8000 : USD 0.1173

5005 - WHS 3


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 336
Multiples : 1
336 : USD 0.3037
500 : USD 0.2926
1000 : USD 0.2831
2500 : USD 0.2747
5000 : USD 0.2674

13061 - WHS 4


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 191
Multiples : 1
191 : USD 0.2129
200 : USD 0.2112
500 : USD 0.1787
1000 : USD 0.169
2000 : USD 0.1674
8000 : USD 0.1529

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Product
Series
Transistor Type
Type
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the RV3C002UNT2CL from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RV3C002UNT2CL and other electronic components in the MOSFET category and beyond.

RV3C002UN Datasheet Nch 20V 150mA Small Signal MOSFET llOutline DFN0604-3 V 20V DSS R (Max.) 2.0 DS(on) VML0604 I 150mA D P 100mW D llFeatures llInner circuit 1) Ultra Small Package (0.60.40.36mm) 2) Low voltage drive (1.5V) makes this device ideal for portable equipment. 3) Drive circuits can be simple. 4) Built-in ESD Protection Diode. llApplication llPackaging specifications Embossed Switching Packing Tape Level shifter Reel size (mm) 180 Tape width (mm) 8 Type Basic ordering unit (pcs) 8000 Taping code T2CL Marking RY llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 20 V DSS *1 I Continuous drain current 150 mA D *2 Pulsed drain current I 600 mA DP V Gate - Source voltage 10 V GSS *3 Power dissipation P 100 mW D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 1/10 20161101 - Rev.002 RV3C002UN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 Thermal resistance, junction - ambient R - - 1250 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 20 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 29 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 20V, V = 0V - - 1 A DSS DS GS drain current I Gate - Source leakage current V = 8V, V = 0V - - 10 A GSS GS DS V = 10V, I = 100A 0.3 - 0.8 DS D V Gate threshold voltage V GS(th) V = 10V, I = 100A DS D - - 0.840 T = -25 a V I = 1mA GS(th) D Gate threshold voltage - -1.6 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 150mA - 1.4 2.0 GS D Static drain - source *4 R V = 2.5V, I = 150mA - 1.7 2.6 DS(on) GS D on - state resistance V = 1.5V, I = 20mA - 2.7 5.4 GS D *1 Limited only by maximum temperature allowed. *2 Pw10s , Duty cycle 1% *3 Each therminal mounted on a reference land *4 Pulsed www.rohm.com 2/10 20161101 - Rev.002 2016 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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