SemiconductorThe RYE002N05TCL with ROHM Semiconductor MOSFET is a standard Low-Voltage/Low-Power N-Channel MOSFET manufactured by ROHM Semiconductor. It is designed to provide excellent switching performance in applications where high switching speed and low on-resistance are required. This MOSFET features a drain current up to 3 A, a drain-source voltage of 30 V, an on-resistance of 0.5 Ohm, and a maximum power dissipation of 480 mW. It also has a fast switching speed of 200 V/us, a body diode forward voltage of 1.2 V, and an Avalanche energy of 10 mJ. This MOSFET is ideal for applications such as automotive, consumer goods, industrial gear, and motor drive.