1.2V Drive Pch MOSFET RZE002P02 z Structure z Dimensions (Unit : mm) Silicon P-channel MOSFET EMT3 1.6 0.7 z Features 0.55 0.3 1) High speed switching. (3) 2) Small package (EMT3). 3) 1.2V drive. (2) (1) 0.2 0.2 0.15 0.5 0.5 1.0 z Applications (1)Source Switching (2)Gate (3)Drain Abbreviated symbol : YK z Package specifications z Inner circuit Package Taping (3) Type Code TL Basic ordering unit (pieces) 3000 RZE002P02 2 (2) 1 (1) (1) Source (2) Gate 1 ESD PROTECTION DIODE (3) Drain 2 BODY DIODE z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Drain-source voltage V 20 V DSS Gate-source voltage VGSS 10 V Continuous I 200 mA D Drain current 1 Pulsed IDP 800 mA Continuous IS 100 mA Souce current 1 (Body diode) Pulsed I mA SP 800 2 P 150 mW Total power dissipation D Channel temperature Tch 150 C Range of storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle1% 2 Each terminal mounted on a recommended land z Thermal resistance Parameter Symbol Limits Unit Channel to ambient Rth(ch-a) 833 C/W Each terminal mounted on a recommended land www.rohm.com 2009.06 - Rev.A 1/4 c 2009 ROHM Co., Ltd. All rights reserved. 0.8 1.6 0.1Min. RZE002P02 Data Sheet z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AVGS= 10V, VDS=0V Drain-source breakdown voltage V 20 VI = 1mA, V =0V (BR) DSS D GS Zero gate voltage drain current IDSS 1 AVDS= 20V, VGS=0V Gate threshold voltage VGS (th) 0.3 1.0 V VDS= 10V, ID= 100A 0.8 1.2 I = 200mA, V = 4.5V D GS 1.0 1.5 ID= 100mA, VGS= 2.5V Static drain-source on-state RDS (on) 1.3 2.2 ID= 100mA, VGS= 1.8V resistance 1.6 3.5 I = 40mA, V = 1.5V D GS 2.4 9.6 ID= 10mA, VGS= 1.2V Forward transfer admittance Yfs 0.2 SVDS= 10V, ID= 200mA Input capacitance Ciss 115 pF VDS= 10V Output capacitance C 10 pF V = 0V oss GS Reverse transfer capacitance Crss 6 pF f=1MHz Turn-on delay time td (on) 6 ns VDD 10V ID= 100mA tr Rise time 4 ns VGS= 4.5V Turn-off delay time td (off) 17 ns RL 100 Fall time tf 17 ns RG= 10 Total gate charge Qg 1.4 nC VDD 10V RL 50 0.3 nC Gate-source charge Qgs ID= 200mA RG= 10 VGS= 4.5V Gate-drain charge Qgd0.3 nC Pulsed z Body diode characteristics (Source-drain) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V IS= 200mA, VGS=0V Pulsed www.rohm.com 2009.06 - Rev.A 2/4 c 2009 ROHM Co., Ltd. All rights reserved.