Product Information

SCT3105KLGC11

SCT3105KLGC11 electronic component of ROHM

Datasheet
N-Channel 1200 V 24A (Tc) 134W Through Hole TO-247N

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 20.8035 ea
Line Total: USD 20.8

422 - Global Stock
Ships to you between
Tue. 28 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
347 - WHS 1


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 20.815
10 : USD 19.8375
25 : USD 17.319
50 : USD 16.997
100 : USD 16.4105
250 : USD 15.2145
450 : USD 15.18
2700 : USD 15.0305

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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SCT3105KL N-channel SiC power MOSFET Datasheet lOutline TO-247N V 1200V DSS R (Typ.) 105m DS(on) I 24A D (3) P 134W (2) D (1) lInner circuit lFeatures (1) Gate (2) Drain 1) Low on-resistance (3) Source 2) Fast switching speed *1 Body Diode 3) Fast reverse recovery 4) Easy to parallel lPackaging specifications 5) Simple to drive Packing Tube 6) Pb-free lead plating RoHS compliant Reel size (mm) - Tape width (mm) - Type lApplication Basic ordering unit (pcs) 30 Solar inverters Taping code C11 DC/DC converters Marking SCT3105KL Switch mode power supplies Induction heating Motor drives lAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit V Drain - Source voltage 1200 V DSS *1 T = 25C 24 A I c D Continuous drain current *1 T = 100C I 17 A c D *2 Pulsed drain current 60 A I D,pulse V Gate - Source voltage (DC) -4 to +22 V GSS *3 Gate - Source Surge Voltage (t < 300nsec) V -4 to +26 V surge GSS surge *4 Recommended Drive Voltage 0 / +18 V V GS op T Junction temperature 175 C j T Range of storage temperature -55 to +175 C stg www.rohm.com TSQ50211-SCT3105KL 2018 ROHM Co., Ltd. All rights reserved. 1/12 14.Jun.2018 - Rev.002 TSZ2211114001Datasheet SCT3105KL lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. Thermal resistance, junction - case R - 0.86 1.12 C/W thJC lElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 1200 - - V (BR)DSS GS D voltage V = 1200V, V = 0V DS GS Zero gate voltage I T = 25C - 1 10 A DSS j drain current T = 150C - 2 - j I V = +22V, V = 0V Gate - Source leakage current - - 100 nA GSS + GS DS Gate - Source leakage current I V = -4V, V = 0V - - -100 nA GSS - GS DS V V = 10V, I = 3.81mA Gate threshold voltage 2.7 - 5.6 V GS (th) DS D V = 18V, I = 7.6A GS D Static drain - source *5 T = 25C R - 105 137 m j DS(on) on - state resistance T = 125C - 158 - j R Gate input resistance f = 1MHz, open drain - 13 - G www.rohm.com TSQ50211-SCT3105KL 2018 ROHM Co., Ltd. All rights reserved. 2/12 14.Jun.2018 - Rev.002 TSZ2211114001

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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