SH8KA4TB1 ROHM

SH8KA4TB1 electronic component of ROHM
SH8KA4TB1 ROHM
SH8KA4TB1 MOSFETs
SH8KA4TB1  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SH8KA4TB1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SH8KA4TB1 MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. SH8KA4TB1
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET 30V Nch+Nch Power MOSFET
Datasheet: SH8KA4TB1 Datasheet (PDF)
Price (USD)
1: USD 1.6625 ea
Line Total: USD 1.66 
Availability : 4056
  
Ship by Mon. 15 Sep to Wed. 17 Sep
QtyUnit Price
1$ 1.6625
10$ 0.9828
100$ 0.5962
500$ 0.5357
1000$ 0.5038
2500$ 0.4895
5000$ 0.4411
10000$ 0.44

Availability 4056
Ship by Mon. 15 Sep to Wed. 17 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.6625
10$ 0.9828
100$ 0.5962
500$ 0.5357
1000$ 0.5038
2500$ 0.4895
5000$ 0.4411
10000$ 0.44

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SH8KA4TB1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SH8KA4TB1 and other electronic components in the MOSFETs category and beyond.

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SH8KA4 Datasheet 30V Nch+Nch Power MOSFET llOutline V 30V DSS R (Max.) 21.4m DS(on) SOP8 I 9.0A D P 3.0W D llFeatures llInner circuit 1) Low on - resistance 2) Small Surface Mount Package (SOP8) 3) Pb-free lead plating RoHS compliant 4) Halogen Free 5) AEC-Q101 Qualified llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 330 Switching Tape width (mm) 12 Type Car Accessory (Navigation, Audio,etc) Quantity (pcs) 2500 Taping code TB Marking SH8KA4 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) <Tr1 and Tr2> a Parameter Symbol Value Unit V Drain - Source voltage 30 V DSS *1 I Continuous drain current 9.0 A D *2 I Pulsed drain current 18 A DP V Gate - Source voltage 20 V GSS *3 I Avalanche current, single pulse 8.0 A AS *3 E Avalanche energy, single pulse 4.6 mJ AS *1 P 3.0 D *4 P Power dissipation (total) 2.0 W D *5 P 1.4 D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 20190527 - Rev.005 2019 ROHM Co., Ltd. All rights reserved. SH8KA4 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *4 R - - 62.5 thJA Thermal resistance, junction - ambient (total) /W *5 R - - 89.2 thJA llElectrical characteristics (T = 25C) <Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V (BR)DSS I = 1mA D Breakdown voltage - 21 - mV/ temperature coefficient T j referenced to 25 Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current Gate - Source I V = 20V, V = 0V - - 100 nA GSS GS DS leakage current Gate threshold V V = V , I = 1mA 1.0 - 2.5 V GS(th) DS GS D voltage V I = 1mA GS(th) D Gate threshold voltage - -3 - mV/ temperature coefficient T j referenced to 25 V = 10V, I = 9.0A - 16.5 21.4 GS D Static drain - source *6 R m DS(on) on - state resistance V = 4.5V, I = 8.0A - 22.2 28.9 GS D Gate resistance R f = 1MHz, open drain - 3.4 - G Forward Transfer *6 Y V = 5V, I = 8.0A 4.6 - - S fs DS D Admittance *1 Pw 1s, Mounted on a ceramic board (30300.8mm), Limited only by maximum temperature allowed. *2 Pw 10s, Duty cycle 1% *3 L 0.1mH, V = 15V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j *4 Mounted on a ceramic board (30300.8mm) *5 Mounted on a Cu board (40400.8mm) *6 Pulsed www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 2/11 20190527 - Rev.005

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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