(5) (4) (8) (1) SP8M3 Transistors Switching SP8M3 z External dimensions (Unit : mm) z Features 1) Low on-resistance. SOP8 2) Built-in G-S Protection Diode. 5.00.2 3) Small and Surface Mount Package (SOP8). z Application Power switching, DC / DC converter. 0.20.1 0.40.1 1.27 0.1 Each lead has same dimensions z Equivalent circuit z Absolute maximum ratings (Ta=25C) Limits (8) (7) (6) (5) (8) (7) (6) (5) Parameter Symbol Unit Nchannel Pchannel Drain-source voltage VDSS 30 30 V Gate-source voltage V 20 20 V GSS Continuous ID 5.0 4.5 A Drain current 2 2 1 I (1) (2) (3) (4) Pulsed DP 20 18 A Continuous IS 1.6 1.6 A Source current (1) Tr1 (Nch) Source (2) Tr1 (Nch) Gate 1 (Body diode) Pulsed ISP 20 18 A 1 1 (3) Tr2 (Pch) Source 2 Total power dissipation PD 2 W (4) Tr2 (Pch) Gate (5) Tr2 (Pch) Drain Channel temperature Tch 150 C (1) (2) (3) (4) (6) Tr2 (Pch) Drain Storage temperature Tstg 55 to +150 C (7) Tr1 (Nch) Drain 1 ESD PROTECTION DIODE (8) Tr1 (Nch) Drain 1 Pw10s, Duty cycle1% 2 BODY DIODE 2 MOUNTED ON A CERAMIC BOARD. A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded. z Thermal resistance (Ta=25C) Parameter Symbol Limits Unit Channel to ambient Rth (ch-a) 62.5 C / W MOUNTED ON A CERAMIC BOARD. Rev.A 1/5 6.00.3 1.50.1 3.90.15 0.15 Max.1.75 0.50.1SP8M3 Transistors N-ch z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AVGS=20V, VDS=0V Drain-source breakdown voltage V 30 VI =1mA, V =0V (BR) DSS D GS Zero gate voltage drain current IDSS 1 AVDS=30V, VGS=0V Gate threshold voltage VGS (th) 1.0 2.5 V VDS=10V, ID=1mA 36 51 I =5.0A, V =10V D GS Static drain-source on-state RDS (on) 52 73 m ID=5.0A, VGS=4.5V resistance 58 82 ID=5.0A, VGS=4V Forward transfer admittance Yfs 3.0 SID=5.0A, VDS=10V Input capacitance C 230 pF V =10V iss DS Output capacitance Coss 80 pF VGS=0V Reverse transfer capacitance Crss 50 pF f=1MHz Turn-on delay time t 6 ns I =2.5A, V 15V d (on) D DD Rise time tr 8 ns VGS=10V Turn-off delay time td (off) 22 ns RL=6.0 Fall time tf 5 ns RG=10 Total gate charge Q 3.9 5.5 nC V 15V g DD Gate-source charge Qgs 1.1 nC VGS=5V Gate-drain charge Qgd1.4 nC ID=5.0A Pulsed z Body diode characteristics (Source-Drain Characteristics) (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V IS=6.4A, VGS=0V Pulsed Rev.A 2/5