STW20N95DK5, STWA20N95DK5 Datasheet N-channel 950 V, 275 m typ., 18 A, MDmesh DK5 Power MOSFETs in TO-247 and TO-247 long leads packages Features V R max. I Order code DS DS(on) D STW20N95DK5 950 V 330 m 18 A STWA20N95DK5 3 2 3 1 2 Fast-recovery body diode 1 Best R x area TO-247 TO-247 long leads DS(on) Low gate charge, input capacitance and resistance 100% avalanche tested D(2, TAB) Extremely high dv/dt ruggedness Applications Switching applications G(1) Description These very high voltage N-channel Power MOSFETs are part of the MDmesh DK5 S(3) fast-recovery diode series. The MDmesh DK5 combines very low recovery charge AM01475v1 noZen (Q ) and recovery time (t ) with an excellent improvement in R * area and rr rr DS(on) one of the most effective switching behaviors, ideal for half bridge and full bridge converters. Product status links STW20N95DK5 STWA20N95DK5 Product summary Order code STW20N95DK5 Marking 20N95DK5 Package TO-247 Packing Tube Order code STWA20N95DK5 Marking 20N95DK5 Package TO-247 long leads Packing Tube DS12132 - Rev 3 - August 2021 www.st.com For further information contact your local STMicroelectronics sales office.STW20N95DK5, STWA20N95DK5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 30 V GS Drain current (continuous) at T = 25 C 18 C I A D Drain current (continuous) at T = 100 C 11 C (1) I Drain current (pulsed) 72 A DM P Total power dissipation at T = 25 C 250 W TOT C (2) dv/dt Peak diode recovery voltage slope 50 V/ns (3) MOSFET dv/dt ruggedness 50 V/ns dv/dt T Storage temperature range C stg -55 to 150 T Operating junction temperature range C J 1. Pulse width limited by safe operating area. 2. I 18 A, di/dt 400 A/s, V (peak) V , V = 760 V. SD DS (BR)DSS DD 3. V 760 V. DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance, junction-to-case 0.5 C/W thJC R Thermal resistance, junction-to-ambient 50 C/W thJA Table 3. Avalanche characteristics Symbol Parameter Value Unit I Maximum current during repetitive or single pulse avalanche 6 A AR E Single pulse avalanche energy (starting T = 25 C, I = I ,V = 50 V) 520 mJ AS J D AR DD DS12132 - Rev 3 page 2/15