Product Information

STW6N90K5

STW6N90K5 electronic component of STMicroelectronics

Datasheet
MOSFET N-channel 900 V, 0.91 Ohm typ., 6 A MDmesh K5 Power MOSFET in a TO-247 package
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 4.231 ea
Line Total: USD 4.23

26 - Global Stock
Ships to you between
Mon. 27 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
26 - WHS 1


Ships to you between
Mon. 27 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

STW6N90K5
STMicroelectronics

1 : USD 3.9675
10 : USD 3.464
30 : USD 3.1639
100 : USD 2.8618
500 : USD 2.7208
1000 : USD 2.6584

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
LoadingGif

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Additional Infomation About Product

STW6N90K5 N-channel 900 V, 0.91 typ., 6 A MDmesh K5 Power MOSFET in a TO-247 package Datasheet - production data Features Order code VDS RDS(on) max. ID STW6N90K5 900 V 1.10 6 A Industrys lowest RDS(on) x area Industrys best FoM (figure of merit) 3 Ultra-low gate charge 2 100% avalanche tested 1 Zener-protected TO-247 Applications Switching applications Figure 1: Internal schematic diagram Description D(2) This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power G(1) density and high efficiency. S(3) AM15572v1 no tab Table 1: Device summary Order code Marking Package Packing STW6N90K5 6N90K5 TO-247 Tube November 2016 DocID029951 Rev 1 1/12 www.st.com This is information on a product in full production. Contents STW6N90K5 Contents 1 Electrical ratings ............................................................................... 3 2 Electrical characteristics ................................................................. 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ...................................................................................... 8 4 Package information ........................................................................ 9 4.1 TO-247 package information ............................................................. 9 5 Revision history .............................................................................. 11 2/12 DocID029951 Rev 1

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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