BCD7N65 Shandong Baocheng

BCD7N65 electronic component of Shandong Baocheng
BCD7N65 Shandong Baocheng
BCD7N65 MOSFETs
BCD7N65  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BCD7N65 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BCD7N65 MOSFETs are a product manufactured by Shandong Baocheng. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. BCD7N65
Manufacturer: Shandong Baocheng
Category: MOSFETs
Description: TO-252 MOSFETs ROHS
Datasheet: BCD7N65 Datasheet (PDF)
Price (USD)
5: USD 0.432 ea
Line Total: USD 2.16 
Availability : 1309
  
Ship by Thu. 09 Oct to Wed. 15 Oct
QtyUnit Price
5$ 0.432
50$ 0.378
150$ 0.2393
500$ 0.2199
2500$ 0.2037
5000$ 0.1984

Availability 1309
Ship by Thu. 09 Oct to Wed. 15 Oct
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.432
50$ 0.378
150$ 0.2393
500$ 0.2199
2500$ 0.2037
5000$ 0.1984

   
Manufacturer
Product Category
Package
Rohs
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BCD7N65 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BCD7N65 and other electronic components in the MOSFETs category and beyond.

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The BCD7N65 with TO-252 MOSFET manufactured by Shandong Baocheng is an advanced silicon transistor that is designed to handle up to 65A of current. It features maximum breakdown voltage of 700V and a low output capacitance of 10 nF. It also features a maximum on-state resistance of < 0.06 ohms and low voltage drop. It is also RoHS compliant and is suitable for use in a wide range of applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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