FDN336P Shikues

Name: FDN336P
Brand: Shikues
SKU: FDN336P_Shikues
Availability: OutOfStock
Rating: 5 (11 reviews)

Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of FDN336P MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDN336P MOSFETs are a product manufactured by Shikues. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.	FDN336P
Manufacturer:	Shikues
Category:	MOSFETs
Description:	MOSFET P Channel 20V 2A 1V @ 250uA 120mO @ 2A,4.5V SOT-23 RoHS
Datasheet:	FDN336P Datasheet (PDF)

Price (USD)

10: USD 0.11 ea
Line Total: USD 1.1

Availability : 0

Qty	Unit Price
10	$ 0.11
100	$ 0.088
300	$ 0.0579
3000	$ 0.0427
6000	$ 0.0384
9000	$ 0.036

FDN336P More Buying Options & Price Grid(s)

Availability

Price (USD)

Quantity

Availability 0

Ship by Mon. 27 Oct to Fri. 31 Oct

MOQ : 10
Multiples : 10

Qty	Unit Price
10	$ 0.11
100	$ 0.088
300	$ 0.0579
3000	$ 0.0427
6000	$ 0.0384
9000	$ 0.036

Specifications

Manufacturer Shikues Shikues
Product Category MOSFETs MOSFETs
Category MOSFET MOSFET
Rohs y y
Package SOT - 23 SOT - 23
Brand Category Shikues Shikues
Fet Type PChannel PChannel
Drain To Source Voltagevdss 20 V 20 V
Continuous Drain Current Id @ 25°C 2 A 2 A
Vgsth Max @ Id 1V @ 250uA 1V @ 250uA
Rds On Max @ Id Vgs 120mO @ 2A,4.5V 120mO @ 2A,4.5V
Drain Source Voltage Vdss 20 V 20 V
Continuous Drain Current Id 2 A 2 A
Power Dissipation Pd - -
Drain Source On Resistance Rdson@Vgs Id 120 mOhms @4.5V , 2A 120 mOhms @4.5V , 2A
Gate Threshold Voltage Vgsth@Id 1 V @250uA 1 V @250uA
Type P Channel P Channel

FDN336P Alternative Parts

Image	Part-Description
Hot	FDN336P SLKORMICRO SOT-23 MOSFETs ROHS Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges. Stock: 1980
Hot	FDN336P TECH PUBLIC SOT-23 MOSFETs ROHS Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges. Stock: 14975
Hot	FDN336P ON Semiconductor Transistor: P-MOSFET; unipolar; -20V; -1.3A; 0.5W; SuperSOT-3 Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges. Stock: 9000

We are delighted to provide the FDN336P from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDN336P and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The FDN336P with MOSFET P Channel 20V and 2A 1V is a surface-mount transistor developed by Shikues. It features a P-channel PowerTrench MOSFET, allowing it to handle high load currents with low ‘on’ resistance. The gate-source breakdown voltage of this device is rated for 20V, and it is capable of handling a peak current of 2 A with a peak pulse current of 1 A. The typical gate threshold voltage of this device is 4.5V, and its small size, SOT-23, allows for efficient use of board space. It is compliant with RoHS regulations, and its maximum power dissipation of 120mO helps improve the reliability of this device.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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