Product Information

FDN336P

Name: FDN336P
Brand: Shikues
SKU: FDN336P_Shikues
Availability: OutOfStock
Rating: 5 (11 reviews)

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MOSFET P Channel 20V 2A 1V @ 250uA 120mO @ 2A,4.5V SOT-23 RoHS

Manufacturer: Shikues

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

10: USD 0.073 ea
Line Total: USD 0.73

0 - Global Stock

MOQ: 10 Multiples: 10
Pack Size: 10

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Tue. 14 May to Fri. 17 May MOQ : 10 Multiples : 10 FDN336P Shikues	10 : USD 0.073 100 : USD 0.0594 300 : USD 0.0527 3000 : USD 0.0431 6000 : USD 0.039 9000 : USD 0.037

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Additional Infomation About Product

The FDN336P with MOSFET P Channel 20V and 2A 1V is a surface-mount transistor developed by Shikues. It features a P-channel PowerTrench MOSFET, allowing it to handle high load currents with low ‘on’ resistance. The gate-source breakdown voltage of this device is rated for 20V, and it is capable of handling a peak current of 2 A with a peak pulse current of 1 A. The typical gate threshold voltage of this device is 4.5V, and its small size, SOT-23, allows for efficient use of board space. It is compliant with RoHS regulations, and its maximum power dissipation of 120mO helps improve the reliability of this device.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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Manufacturer Shikues Shikues
Product Category MOSFET MOSFET
Category MOSFET MOSFET
Rohs y y
Package SOT - 23 SOT - 23
Brand Category Shikues Shikues
Fet Type PChannel PChannel
Drain To Source Voltagevdss 20 V 20 V
Continuous Drain Current Id @ 25°C 2 A 2 A
Vgsth Max @ Id 1V @ 250uA 1V @ 250uA
Rds On Max @ Id Vgs 120mO @ 2A,4.5V 120mO @ 2A,4.5V
Drain Source Voltage Vdss 20 V 20 V
Continuous Drain Current Id 2 A 2 A
Power Dissipation Pd - -
Drain Source On Resistance Rdson@Vgs Id 120 mOhms @4.5V , 2A 120 mOhms @4.5V , 2A
Gate Threshold Voltage Vgsth@Id 1 V @250uA 1 V @250uA
Type P Channel P Channel